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Samsung M471B5273CH0-CH9 4GB
A-DATA Technology DDR4 2666 2OZ 4GB

Samsung M471B5273CH0-CH9 4GB vs A-DATA Technology DDR4 2666 2OZ 4GB

Overall score
star star star star star
Samsung M471B5273CH0-CH9 4GB

Samsung M471B5273CH0-CH9 4GB

Overall score
star star star star star
A-DATA Technology DDR4 2666 2OZ 4GB

A-DATA Technology DDR4 2666 2OZ 4GB

Differences Specifications Comments

Differences

Samsung M471B5273CH0-CH9 4GB Reasons to consider
Samsung M471B5273CH0-CH9 4GB
Report a bug
A-DATA Technology DDR4 2666 2OZ 4GB Reasons to consider
A-DATA Technology DDR4 2666 2OZ 4GB
Report a bug
  • Below the latency in the PassMark tests, ns
    30 left arrow 48
    Around -60% lower latency
  • Faster reading speed, GB/s
    16.7 left arrow 8.9
    Average value in the tests
  • Faster write speed, GB/s
    12.3 left arrow 5.9
    Average value in the tests
  • Higher memory bandwidth, mbps
    17000 left arrow 10600
    Around 1.6 higher bandwidth

Specifications

Complete list of technical specifications
Samsung M471B5273CH0-CH9 4GB
A-DATA Technology DDR4 2666 2OZ 4GB
Main characteristics
  • Memory type
    DDR3 left arrow DDR4
  • Latency in PassMark, ns
    48 left arrow 30
  • Read speed, GB/s
    8.9 left arrow 16.7
  • Write speed, GB/s
    5.9 left arrow 12.3
  • Memory bandwidth, mbps
    10600 left arrow 17000
Other
  • Description
    PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
  • Timings / Clock speed
    7-7-7-20 / 1333 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • Ranking PassMark (The more the better)
    1420 left arrow 3106

Samsung M471B5273CH0-CH9 4GB RAM comparisons

G Skill Intl F3-1600C9-4GRSL 4GB
Crucial Technology CT8G4DFS824A.M8FH 8GB

A-DATA Technology DDR4 2666 2OZ 4GB RAM comparisons

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
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