RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M471B5273CH0-CH9 4GB
Century Micro Inc. CENTURY JAPAN MEMORY 8GB
Compare
Samsung M471B5273CH0-CH9 4GB vs Century Micro Inc. CENTURY JAPAN MEMORY 8GB
Overall score
Samsung M471B5273CH0-CH9 4GB
Overall score
Century Micro Inc. CENTURY JAPAN MEMORY 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M471B5273CH0-CH9 4GB
Report a bug
Reasons to consider
Century Micro Inc. CENTURY JAPAN MEMORY 8GB
Report a bug
Below the latency in the PassMark tests, ns
36
48
Around -33% lower latency
Faster reading speed, GB/s
16
8.9
Average value in the tests
Faster write speed, GB/s
13.2
5.9
Average value in the tests
Higher memory bandwidth, mbps
17000
10600
Around 1.6 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M471B5273CH0-CH9 4GB
Century Micro Inc. CENTURY JAPAN MEMORY 8GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
48
36
Read speed, GB/s
8.9
16.0
Write speed, GB/s
5.9
13.2
Memory bandwidth, mbps
10600
17000
Other
Description
PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9
PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
Timings / Clock speed
7-7-7-20 / 1333 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
1420
3313
Samsung M471B5273CH0-CH9 4GB RAM comparisons
G Skill Intl F3-1600C9-4GRSL 4GB
Crucial Technology CT8G4DFS824A.M8FH 8GB
Century Micro Inc. CENTURY JAPAN MEMORY 8GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston 9965525-155.A00LF 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Transcend Information JM3200HLE-32G 32GB
Micron Technology 16JTF1G64AZ-1G6E1 8GB
SK Hynix HMA82GS6JJR8N-VK 16GB
PNY Electronics PNY 2GB
G Skill Intl F4-2666C18-32GTZN 32GB
Micron Technology 16JTF1G64AZ-1G6E1 8GB
Corsair CMK16GX4M2E4333C19 8GB
SK Hynix HMT451S6BFR8A-PB 4GB
G Skill Intl F4-4266C17-16GTZRB 16GB
Apacer Technology 78.01G86.9H50C 1GB
Corsair CMR32GX4M4D3200C16 8GB
Kingston 99U5403-036.A00G 4GB
Crucial Technology CT4G4DFS8266.M8FF 4GB
Samsung M3 78T3354BZ0-CCC 256MB
Crucial Technology CT16G4SFDFD4A.M16FH 16GB
Kingston 9905403-444.A00LF 4GB
Corsair CMV4GX4M1A2400C16 4GB
Micron Technology 16JTF51264HZ-1G6M1 4GB
A-DATA Technology DDR4 3200 2OZ 4GB
Kingston 9905584-016.A00LF 4GB
Crucial Technology CT8G4DFD8213.C16FHP 8GB
Qimonda 64T128020EDL2.5C2 1GB
SK Hynix HMA82GR7JJR8N-VK 16GB
Nanya Technology NT4GC72B4NA1NL-CG 4GB
G Skill Intl F4-3200C16-4GRKD 4GB
G Skill Intl F3-1333C9-4GIS 4GB
Apacer Technology 78.D1GMM.AU10B 16GB
Report a bug
×
Bug description
Source link