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Samsung M471B5273CH0-CH9 4GB
InnoDisk Corporation M4S0-4GSSNCSJ 4GB

Samsung M471B5273CH0-CH9 4GB vs InnoDisk Corporation M4S0-4GSSNCSJ 4GB

Overall score
star star star star star
Samsung M471B5273CH0-CH9 4GB

Samsung M471B5273CH0-CH9 4GB

Overall score
star star star star star
InnoDisk Corporation M4S0-4GSSNCSJ 4GB

InnoDisk Corporation M4S0-4GSSNCSJ 4GB

Differences Specifications Comments

Differences

Samsung M471B5273CH0-CH9 4GB Reasons to consider
Samsung M471B5273CH0-CH9 4GB
Report a bug
  • Below the latency in the PassMark tests, ns
    48 left arrow 86
    Around 44% lower latency
  • Faster write speed, GB/s
    5.9 left arrow 5.7
    Average value in the tests
InnoDisk Corporation M4S0-4GSSNCSJ 4GB Reasons to consider
InnoDisk Corporation M4S0-4GSSNCSJ 4GB
Report a bug
  • Faster reading speed, GB/s
    12.1 left arrow 8.9
    Average value in the tests
  • Higher memory bandwidth, mbps
    19200 left arrow 10600
    Around 1.81 higher bandwidth

Specifications

Complete list of technical specifications
Samsung M471B5273CH0-CH9 4GB
InnoDisk Corporation M4S0-4GSSNCSJ 4GB
Main characteristics
  • Memory type
    DDR3 left arrow DDR4
  • Latency in PassMark, ns
    48 left arrow 86
  • Read speed, GB/s
    8.9 left arrow 12.1
  • Write speed, GB/s
    5.9 left arrow 5.7
  • Memory bandwidth, mbps
    10600 left arrow 19200
Other
  • Description
    PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • Timings / Clock speed
    7-7-7-20 / 1333 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • Ranking PassMark (The more the better)
    1420 left arrow 1220

Samsung M471B5273CH0-CH9 4GB RAM comparisons

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RAM Latency Calculator
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