RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M471B5273EB0-CK0 4GB
Avant Technology J641GU42J7240N3 8GB
Compare
Samsung M471B5273EB0-CK0 4GB vs Avant Technology J641GU42J7240N3 8GB
Overall score
Samsung M471B5273EB0-CK0 4GB
Overall score
Avant Technology J641GU42J7240N3 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M471B5273EB0-CK0 4GB
Report a bug
Reasons to consider
Avant Technology J641GU42J7240N3 8GB
Report a bug
Below the latency in the PassMark tests, ns
23
40
Around -74% lower latency
Faster reading speed, GB/s
16.7
12.3
Average value in the tests
Faster write speed, GB/s
12.1
8.9
Average value in the tests
Higher memory bandwidth, mbps
19200
12800
Around 1.5 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M471B5273EB0-CK0 4GB
Avant Technology J641GU42J7240N3 8GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
40
23
Read speed, GB/s
12.3
16.7
Write speed, GB/s
8.9
12.1
Memory bandwidth, mbps
12800
19200
Other
Description
PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
Timings / Clock speed
9-9-9-24 / 1600 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
1789
2977
Samsung M471B5273EB0-CK0 4GB RAM comparisons
A-DATA Technology AD73I1C1674EV 4GB
Samsung M378B1G73DB0-CK0 8GB
Avant Technology J641GU42J7240N3 8GB RAM comparisons
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Kingston 9905403-444.A00LF 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Crucial Technology BLS8G3N18AES4.16FE 8GB
Corsair CM4X8GD3000C16K4D 8GB
Samsung M471B5273EB0-CK0 4GB
Avant Technology J641GU42J7240N3 8GB
Nanya Technology M2X4G64CB8HG9N-DG 4GB
Hynix Semiconductor (Hyundai Electronics) GKE160UD10240
Hexon Technology Pte Ltd HEXON 1GB
Hyundai Inc AR32C16S8K2SU416R 8GB
Kingston 99U5471-030.A00LF 8GB
JUHOR JHD2666U1908JG 8GB
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Corsair CMK16GX4M2Z4000C18 8GB
SK Hynix HMT41GU7BFR8A-PB 8GB
AMD R744G2400U1S 4GB
Kingston HX316C10F/8 8GB
Samsung M378A5244BB0-CRC 4GB
Kingston 9905403-061.A00LF 2GB
Crucial Technology CT8G4SFRA266.C8FE 8GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Essencore Limited IM48GU88A30-FGGHMZ 8GB
Kingston KVR16N11/8-SP 8GB
G Skill Intl F4-2666C18-8GRS 8GB
Corsair CMX4GX3M2A1600C9 2GB
G Skill Intl F4-2666C18-8GFT 8GB
Kingston 9905471-002.A00LF 2GB
A-DATA Technology DDR4 2133 2OZ 8GB
Samsung M393B1G70BH0-CK0 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160UD10240
Report a bug
×
Bug description
Source link