SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB
Hynix Semiconductor (Hyundai Electronics) HMA82GS6CJR8N-VK 16GB

SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB vs Hynix Semiconductor (Hyundai Electronics) HMA82GS6CJR8N-VK 16GB

Overall score
star star star star star
SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB

SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB

Overall score
star star star star star
Hynix Semiconductor (Hyundai Electronics) HMA82GS6CJR8N-VK 16GB

Hynix Semiconductor (Hyundai Electronics) HMA82GS6CJR8N-VK 16GB

Differences

  • Faster write speed, GB/s
    13.6 left arrow 9.0
    Average value in the tests
  • Below the latency in the PassMark tests, ns
    30 left arrow 46
    Around -53% lower latency
  • Faster reading speed, GB/s
    14.5 left arrow 14.2
    Average value in the tests

Specifications

Complete list of technical specifications
SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB
Hynix Semiconductor (Hyundai Electronics) HMA82GS6CJR8N-VK 16GB
Main characteristics
  • Memory type
    DDR4 left arrow DDR4
  • Latency in PassMark, ns
    46 left arrow 30
  • Read speed, GB/s
    14.2 left arrow 14.5
  • Write speed, GB/s
    13.6 left arrow 9.0
  • Memory bandwidth, mbps
    21300 left arrow 21300
Other
  • Description
    PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • Timings / Clock speed
    17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • Ranking PassMark (The more the better)
    2717 left arrow 2374
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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