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SK Hynix DDR2 800 2G 2GB
Golden Empire CL16-18-18 D4-3400 4GB
Compare
SK Hynix DDR2 800 2G 2GB vs Golden Empire CL16-18-18 D4-3400 4GB
Overall score
SK Hynix DDR2 800 2G 2GB
Overall score
Golden Empire CL16-18-18 D4-3400 4GB
Differences
Specifications
Comments
Differences
Reasons to consider
SK Hynix DDR2 800 2G 2GB
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Faster reading speed, GB/s
2
14.4
Average value in the tests
Reasons to consider
Golden Empire CL16-18-18 D4-3400 4GB
Report a bug
Below the latency in the PassMark tests, ns
26
77
Around -196% lower latency
Faster write speed, GB/s
11.2
1,884.0
Average value in the tests
Higher memory bandwidth, mbps
17000
6400
Around 2.66 higher bandwidth
Specifications
Complete list of technical specifications
SK Hynix DDR2 800 2G 2GB
Golden Empire CL16-18-18 D4-3400 4GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
77
26
Read speed, GB/s
2,936.9
14.4
Write speed, GB/s
1,884.0
11.2
Memory bandwidth, mbps
6400
17000
Other
Description
PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6
PC4-17000, 1.2V, CAS Supported: 14 15 16
Timings / Clock speed
5-5-5-15 / 800 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
564
2846
SK Hynix DDR2 800 2G 2GB RAM comparisons
Samsung M378T5663QZ3-CF7 2GB
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Golden Empire CL16-18-18 D4-3400 4GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
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Hynix Semiconductor (Hyundai Electronics) GKE800SO51208
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