RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
SK Hynix HMA451U6AFR8N-TF 4GB
Kingston CBD26D4U9D8ME-16 16GB
Compare
SK Hynix HMA451U6AFR8N-TF 4GB vs Kingston CBD26D4U9D8ME-16 16GB
Overall score
SK Hynix HMA451U6AFR8N-TF 4GB
Overall score
Kingston CBD26D4U9D8ME-16 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
SK Hynix HMA451U6AFR8N-TF 4GB
Report a bug
Reasons to consider
Kingston CBD26D4U9D8ME-16 16GB
Report a bug
Below the latency in the PassMark tests, ns
30
37
Around -23% lower latency
Faster reading speed, GB/s
17.5
14.7
Average value in the tests
Faster write speed, GB/s
14.8
10.6
Average value in the tests
Higher memory bandwidth, mbps
21300
17000
Around 1.25 higher bandwidth
Specifications
Complete list of technical specifications
SK Hynix HMA451U6AFR8N-TF 4GB
Kingston CBD26D4U9D8ME-16 16GB
Main characteristics
Memory type
DDR4
DDR4
Latency in PassMark, ns
37
30
Read speed, GB/s
14.7
17.5
Write speed, GB/s
10.6
14.8
Memory bandwidth, mbps
17000
21300
Other
Description
PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
Timings / Clock speed
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (The more the better)
2438
3575
SK Hynix HMA451U6AFR8N-TF 4GB RAM comparisons
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston CBD26D4U9D8ME-16 16GB RAM comparisons
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
SK Hynix HMA451U6AFR8N-TF 4GB
Kingston CBD26D4U9D8ME-16 16GB
Kingston 9965525-018.A00LF 4GB
Crucial Technology BL16G36C16U4R.M16FE1 16GB
PNY Electronics PNY 2GB
Micron Technology 18ASF2G72AZ-2G6D1 16GB
Kingston 9965669-018.A00G 16GB
Crucial Technology BLS16G4S240FSD.16FAD 16GB
Samsung M471B5773DH0-CH9 2GB
Transcend Information TS1GSH64V1H 8GB
G Skill Intl F3-1333C9-4GIS 4GB
Crucial Technology BLS16G4D30AESC.M16FE 16GB
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
Micron Technology 16ATF2G64HZ-2G3A1 16GB
Samsung M4 70T5663CZ3-CE6 2GB
Gold Key Technology Co Ltd NMSO416E82-3200E 16GB
Hynix Semiconductor (Hyundai Electronics) HMT31GR7AFR4C
Panram International Corporation W4N2666PS-16G 16GB
Kingston KVT8FP-HYC 4GB
Crucial Technology CT16G4SFD824A.M16FE 16GB
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Panram International Corporation PUD42400C168GVS 8GB
G Skill Intl F3-14900CL8-4GBXM 4GB
Gloway International (HK) STK4U2133D15081C 8GB
Samsung M3 78T3354BZ0-CCC 256MB
V-GEN D4H8GS24A8 8GB
Kingston KHX1866C10D3/8GX 8GB
Corsair CMK8GX4M2B3200C16 4GB
Report a bug
×
Bug description
Source link