RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
SK Hynix HMA451U6AFR8N-TF 4GB
Shenzhen Xingmem Technology Corp M378A1K43BB1-CPB 8GB
Compare
SK Hynix HMA451U6AFR8N-TF 4GB vs Shenzhen Xingmem Technology Corp M378A1K43BB1-CPB 8GB
Overall score
SK Hynix HMA451U6AFR8N-TF 4GB
Overall score
Shenzhen Xingmem Technology Corp M378A1K43BB1-CPB 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
SK Hynix HMA451U6AFR8N-TF 4GB
Report a bug
Below the latency in the PassMark tests, ns
37
74
Around 50% lower latency
Faster reading speed, GB/s
14.7
13.8
Average value in the tests
Faster write speed, GB/s
10.6
7.9
Average value in the tests
Reasons to consider
Shenzhen Xingmem Technology Corp M378A1K43BB1-CPB 8GB
Report a bug
Higher memory bandwidth, mbps
21300
17000
Around 1.25 higher bandwidth
Specifications
Complete list of technical specifications
SK Hynix HMA451U6AFR8N-TF 4GB
Shenzhen Xingmem Technology Corp M378A1K43BB1-CPB 8GB
Main characteristics
Memory type
DDR4
DDR4
Latency in PassMark, ns
37
74
Read speed, GB/s
14.7
13.8
Write speed, GB/s
10.6
7.9
Memory bandwidth, mbps
17000
21300
Other
Description
PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
Timings / Clock speed
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (The more the better)
2438
1825
SK Hynix HMA451U6AFR8N-TF 4GB RAM comparisons
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Shenzhen Xingmem Technology Corp M378A1K43BB1-CPB 8GB RAM comparisons
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Kingston ACR512X64D3S13C9G 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Kingston 9905471-001.A01LF 2GB
Crucial Technology CT8G4SFRA266.C8FE 8GB
SK Hynix HMA451U6AFR8N-TF 4GB
Shenzhen Xingmem Technology Corp M378A1K43BB1-CPB 8GB
Samsung M393B1K70CH0-CH9 8GB
Kingston 9965690-002.A00G 8GB
Samsung M3 78T2863EHS-CF7 1GB
Crucial Technology CT16G4SFD8266.C8FBD1 16GB
Ramaxel Technology RMSA3260NA78HAF-2666 8GB
Crucial Technology CT16G4DFRA32A.C16FN 16GB
Wilk Elektronik S.A. GR1333D364L9/4G 4GB
G Skill Intl F4-4000C17-8GTZRB 8GB
Nanya Technology M2F8G64CB8HC9N-DI 8GB
SanMax Technologies Inc. SMD4-U16G48HD1-29Y 16GB
Qimonda 72T128420EFA3SB2 1GB
Crucial Technology BLS4G4D26BFSB.8FD2 4GB
Samsung M378B5773DH0-CH9 2GB
Corsair CM4X8GF2666Z16K4 8GB
PUSKILL DDR3 1600 8G 8GB
Avant Technology J642GU42J7240N2 16GB
SK Hynix HYMP112U64CP8-S6 1GB
G Skill Intl F4-2800C16-4GRR 4GB
Samsung M471B5273CH0-CH9 4GB
Micron Technology 8ATF1G64AZ-2G6H1 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
G Skill Intl F4-4266C19-8GTZR 8GB
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Crucial Technology BLS8G4S26BFSDK.8FBD 8GB
Report a bug
×
Bug description
Source link