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SK Hynix HYMP112U64CP8-S6 1GB
Samsung M471A5143EB0-CPB 4GB

SK Hynix HYMP112U64CP8-S6 1GB vs Samsung M471A5143EB0-CPB 4GB

Overall score
star star star star star
SK Hynix HYMP112U64CP8-S6 1GB

SK Hynix HYMP112U64CP8-S6 1GB

Overall score
star star star star star
Samsung M471A5143EB0-CPB 4GB

Samsung M471A5143EB0-CPB 4GB

Differences Specifications Comments

Differences

SK Hynix HYMP112U64CP8-S6 1GB Reasons to consider
SK Hynix HYMP112U64CP8-S6 1GB
Report a bug
  • Faster reading speed, GB/s
    4 left arrow 13.5
    Average value in the tests
  • Faster write speed, GB/s
    2,076.1 left arrow 10.3
    Average value in the tests
Samsung M471A5143EB0-CPB 4GB Reasons to consider
Samsung M471A5143EB0-CPB 4GB
Report a bug
  • Below the latency in the PassMark tests, ns
    35 left arrow 59
    Around -69% lower latency
  • Higher memory bandwidth, mbps
    17000 left arrow 6400
    Around 2.66 higher bandwidth

Specifications

Complete list of technical specifications
SK Hynix HYMP112U64CP8-S6 1GB
Samsung M471A5143EB0-CPB 4GB
Main characteristics
  • Memory type
    DDR2 left arrow DDR4
  • Latency in PassMark, ns
    59 left arrow 35
  • Read speed, GB/s
    4,723.5 left arrow 13.5
  • Write speed, GB/s
    2,076.1 left arrow 10.3
  • Memory bandwidth, mbps
    6400 left arrow 17000
Other
  • Description
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • Timings / Clock speed
    5-5-5-15 / 800 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • Ranking PassMark (The more the better)
    741 left arrow 2155

SK Hynix HYMP112U64CP8-S6 1GB RAM comparisons

SK Hynix HYMP112U64CP8-Y5 1GB
SK Hynix HYMP164U64CP6-Y5 512MB

Samsung M471A5143EB0-CPB 4GB RAM comparisons

Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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