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SK Hynix HYMP512S64CP8-Y5 1GB
Micron Technology CT8G4DFD8213.16FA11 8GB

SK Hynix HYMP512S64CP8-Y5 1GB vs Micron Technology CT8G4DFD8213.16FA11 8GB

Overall score
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SK Hynix HYMP512S64CP8-Y5 1GB

SK Hynix HYMP512S64CP8-Y5 1GB

Overall score
star star star star star
Micron Technology CT8G4DFD8213.16FA11 8GB

Micron Technology CT8G4DFD8213.16FA11 8GB

Differences Specifications Comments

Differences

SK Hynix HYMP512S64CP8-Y5 1GB Reasons to consider
SK Hynix HYMP512S64CP8-Y5 1GB
Report a bug
  • Faster reading speed, GB/s
    3 left arrow 12
    Average value in the tests
Micron Technology CT8G4DFD8213.16FA11 8GB Reasons to consider
Micron Technology CT8G4DFD8213.16FA11 8GB
Report a bug
  • Below the latency in the PassMark tests, ns
    28 left arrow 68
    Around -143% lower latency
  • Faster write speed, GB/s
    9.1 left arrow 1,670.7
    Average value in the tests
  • Higher memory bandwidth, mbps
    17000 left arrow 5300
    Around 3.21 higher bandwidth

Specifications

Complete list of technical specifications
SK Hynix HYMP512S64CP8-Y5 1GB
Micron Technology CT8G4DFD8213.16FA11 8GB
Main characteristics
  • Memory type
    DDR2 left arrow DDR4
  • Latency in PassMark, ns
    68 left arrow 28
  • Read speed, GB/s
    3,554.9 left arrow 12.0
  • Write speed, GB/s
    1,670.7 left arrow 9.1
  • Memory bandwidth, mbps
    5300 left arrow 17000
Other
  • Description
    PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
  • Timings / Clock speed
    5-5-5-15 / 667 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • Ranking PassMark (The more the better)
    513 left arrow 2347

SK Hynix HYMP512S64CP8-Y5 1GB RAM comparisons

Samsung M4 70T2953EZ3-CE6 1GB
G Skill Intl F4-4000C18-8GTZR 8GB

Micron Technology CT8G4DFD8213.16FA11 8GB RAM comparisons

Samsung M386B4G70DM0-CMA4 32GB
Kingston ACR512X64D3S13C9G 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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