RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
SK Hynix HYMP512U64CP8-Y5 1GB
Shanghai Kuxin Microelectronics Ltd NMUD440D82-2400E 4GB
Compare
SK Hynix HYMP512U64CP8-Y5 1GB vs Shanghai Kuxin Microelectronics Ltd NMUD440D82-2400E 4GB
Overall score
SK Hynix HYMP512U64CP8-Y5 1GB
Overall score
Shanghai Kuxin Microelectronics Ltd NMUD440D82-2400E 4GB
Differences
Specifications
Comments
Differences
Reasons to consider
SK Hynix HYMP512U64CP8-Y5 1GB
Report a bug
Faster reading speed, GB/s
3
12.5
Average value in the tests
Reasons to consider
Shanghai Kuxin Microelectronics Ltd NMUD440D82-2400E 4GB
Report a bug
Below the latency in the PassMark tests, ns
31
63
Around -103% lower latency
Faster write speed, GB/s
9.4
1,583.7
Average value in the tests
Higher memory bandwidth, mbps
19200
5300
Around 3.62 higher bandwidth
Specifications
Complete list of technical specifications
SK Hynix HYMP512U64CP8-Y5 1GB
Shanghai Kuxin Microelectronics Ltd NMUD440D82-2400E 4GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
63
31
Read speed, GB/s
3,895.6
12.5
Write speed, GB/s
1,583.7
9.4
Memory bandwidth, mbps
5300
19200
Other
Description
PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
Timings / Clock speed
5-5-5-15 / 667 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
639
2361
SK Hynix HYMP512U64CP8-Y5 1GB RAM comparisons
Nanya Technology M2Y1G64TU8HB0B-25C 1GB
Nanya Technology NT1GT64U8HB0BY-3C 1GB
Shanghai Kuxin Microelectronics Ltd NMUD440D82-2400E 4GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
A-DATA Technology DOVF1B163G2G 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
A-DATA Technology VDQVE1B16 2GB
Kingston X2YH1K-MIE-NX 16GB
Nanya Technology NT512T64U88B0BY-3C 512MB
G Skill Intl F4-4400C19-32GVK 32GB
Kingston ACR16D3LS1KNG/4G 4GB
Transcend Information AQD-D4U4GN21-SG 4GB
SK Hynix HYMP512U64CP8-Y5 1GB
Shanghai Kuxin Microelectronics Ltd NMUD440D82-2400E 4G
Corsair CMX4GX3M1A1333C9 4GB
Micron Technology AFSD416ES1P 16GB
SK Hynix HYMP512U64CP8-Y5 1GB
Micron Technology MTA8ATF1G64HZ-2G3B1 16GB
G Skill Intl F2-5300CL4-1GBSA 1GB
Kingston 9905678-041.A00G 4GB
PUSKILL DDR3 1600 8G 8GB
Crucial Technology CT16G4DFD8213.M16FA 16GB
Kingston 99U5474-013.A00LF 2GB
Crucial Technology CT4G4DFS8213.8FA11?? 4GB
Kingston 99U5584-004.A00LF 4GB
Hynix Semiconductor (Hyundai Electronics) HMA82GU6AFR8N
Golden Empire 1GB DDR2 800 CAS=4 1GB
Crucial Technology CT8G4DFS8266.C8FD1 8GB
G Skill Intl F2-5300CL4-1GBSA 1GB
Crucial Technology CT4G4SFS824A.M8FE 4GB
SK Hynix HMT41GU7BFR8A-PB 8GB
Crucial Technology CT16G4SFD824A.C16FJ 16GB
Samsung M378B5273CH0-CH9 4GB
Kingston 9965662-004.A00G 16GB
Report a bug
×
Bug description
Source link