RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Hynix Semiconductor (Hyundai Electronics) HMA851U6AFR6N-UH 4GB
Compare
STEC (Silicon Tech) S1024R3NN2QK-I 1GB vs Hynix Semiconductor (Hyundai Electronics) HMA851U6AFR6N-UH 4GB
Overall score
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Overall score
Hynix Semiconductor (Hyundai Electronics) HMA851U6AFR6N-UH 4GB
Differences
Specifications
Comments
Differences
Reasons to consider
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Report a bug
Below the latency in the PassMark tests, ns
63
122
Around 48% lower latency
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) HMA851U6AFR6N-UH 4GB
Report a bug
Faster reading speed, GB/s
9.4
3
Average value in the tests
Faster write speed, GB/s
5.8
1,447.3
Average value in the tests
Higher memory bandwidth, mbps
19200
5300
Around 3.62 higher bandwidth
Specifications
Complete list of technical specifications
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Hynix Semiconductor (Hyundai Electronics) HMA851U6AFR6N-UH 4GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
63
122
Read speed, GB/s
3,231.0
9.4
Write speed, GB/s
1,447.3
5.8
Memory bandwidth, mbps
5300
19200
Other
Description
PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
Timings / Clock speed
5-5-5-15 / 667 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
478
1411
STEC (Silicon Tech) S1024R3NN2QK-I 1GB RAM comparisons
Apacer Technology 78.01GA0.AF5 1GB
Team Group Inc. Xtreem-D2-667 1GB
Hynix Semiconductor (Hyundai Electronics) HMA851U6AFR6N-UH 4GB RAM comparisons
A-DATA Technology AD73I1C1674EV 4GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Samsung M378B5273CH0-CH9 4GB
G Skill Intl F4-3600C18-8GTZR 8GB
Golden Empire 1GB DDR2 800 CAS=4 1GB
Asgard VMA45UG-MIC1U22T2 8GB
Kingston 99U5474-010.A00LF 2GB
Kingston 9905678-065.A00G 8GB
G Skill Intl F3-1866C8-8GTX 8GB
Samsung M471A2K43BB1-CTD 16GB
Corsair CMY16GX3M4A2133C8 4GB
Chun Well Technology Holding Limited D4U0832160B 8GB
A-DATA Technology AM2L16BC4R1-B0AS 4GB
Asgard VMA42UG-MEC1U2AW1 8GB
Nanya Technology NT2GT64U8HD0BY-AD 2GB
Corsair CMK32GX4M4D3000C16 8GB
Samsung M378B5773DH0-CH9 2GB
Ramaxel Technology RMSA3320KE78HAF-3200 8GB
Kingston KHX3200C18D4/8G 8GB
Patriot Memory (PDP Systems) 3000 C18 Series 16GB
Kingston 99U5428-040.A00LF 4GB
Crucial Technology BLT8G4D30BET4K.C8FD 8GB
Kingston 99P5471-002.A00LF 2GB
Ramaxel Technology RMUA5120MB86H9F2400 4GB
Ramaxel Technology RMT3020EC58E9F1333 4GB
Micron Technology 8ATF1G64AZ-2G3A1 8GB
Samsung M471B5173QH0-YK0 4GB
G Skill Intl F4-3600C19-8GVSB 8GB
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C
Corsair CMWX8GD3200C16W2E 8GB
Report a bug
×
Bug description
Source link