RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Strontium EVMT8G1600U86S 8GB
Golden Empire CL16-18-18 D4-3400 4GB
Compare
Strontium EVMT8G1600U86S 8GB vs Golden Empire CL16-18-18 D4-3400 4GB
Overall score
Strontium EVMT8G1600U86S 8GB
Overall score
Golden Empire CL16-18-18 D4-3400 4GB
Differences
Specifications
Comments
Differences
Reasons to consider
Strontium EVMT8G1600U86S 8GB
Report a bug
Reasons to consider
Golden Empire CL16-18-18 D4-3400 4GB
Report a bug
Below the latency in the PassMark tests, ns
26
31
Around -19% lower latency
Faster reading speed, GB/s
14.4
11.7
Average value in the tests
Faster write speed, GB/s
11.2
7.2
Average value in the tests
Higher memory bandwidth, mbps
17000
12800
Around 1.33 higher bandwidth
Specifications
Complete list of technical specifications
Strontium EVMT8G1600U86S 8GB
Golden Empire CL16-18-18 D4-3400 4GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
31
26
Read speed, GB/s
11.7
14.4
Write speed, GB/s
7.2
11.2
Memory bandwidth, mbps
12800
17000
Other
Description
PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11
PC4-17000, 1.2V, CAS Supported: 14 15 16
Timings / Clock speed
9-9-9-24 / 1600 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
1990
2846
Strontium EVMT8G1600U86S 8GB RAM comparisons
Strontium EVMT8G1333U86S 8GB
Corsair CMW16GX4M2Z3200C16 8GB
Golden Empire CL16-18-18 D4-3400 4GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Strontium EVMT8G1600U86S 8GB
Golden Empire CL16-18-18 D4-3400 4GB
Samsung M393B5270CH0-CH9 4GB
Shanghai Kuxin Microelectronics Ltd NMUD480E82-3200 8GB
SK Hynix HMT451U7BFR8C-RD 4GB
Gloway International (HK) STKD4GAM2400-F 8GB
Crucial Technology CT102464BA160B.M16 8GB
G Skill Intl F4-2133C15-16GFT 16GB
Samsung M4 70T2953EZ3-CE6 1GB
Crucial Technology BLS8G4S26BFSDK.8FD 8GB
SK Hynix HMT351U6CFR8C-H9 4GB
Patriot Memory (PDP Systems) 4000 C19 Series 8GB
SK Hynix HYMP31GF72CMP4D5Y5 8GB
Micron Technology 36ASF4G72PZ-2G3A1 32GB
Crucial Technology CT8G4SFRA266.C8FD1 8GB
Samsung M471A1K43DB1-CTD 8GB
Crucial Technology CT102464BF160B-16F 8GB
Crucial Technology BL32G32C16U4B.M16FB1 32GB
Kingmax Semiconductor KLDD48F-B8KU5 1GB
Corsair CMK16GX4M2B2800C14 8GB
SK Hynix HMT451S6BFR8A-PB 4GB
Kingston 9905622-051.A00G 8GB
Samsung M471B1G73DB0-YK0 8GB
Crucial Technology BLT8G4D26AFTA.16FAD 8GB
G Skill Intl F3-10600CL9-2GBNT 2GB
Wilk Elektronik S.A. IRX2666D464L16S/8G 8GB
Crucial Technology CT102464BA160B.M16 8GB
Micron Technology MTA8ATF1G64HZ-2G3B1 16GB
Report a bug
×
Bug description
Source link