RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
takeMS International AG TMS2GB264D082-805G 2GB
Gloway International (HK) STK4U2400D17041C 4GB
Compare
takeMS International AG TMS2GB264D082-805G 2GB vs Gloway International (HK) STK4U2400D17041C 4GB
Overall score
takeMS International AG TMS2GB264D082-805G 2GB
Overall score
Gloway International (HK) STK4U2400D17041C 4GB
Differences
Specifications
Comments
Differences
Reasons to consider
takeMS International AG TMS2GB264D082-805G 2GB
Report a bug
Below the latency in the PassMark tests, ns
46
71
Around 35% lower latency
Faster reading speed, GB/s
5
15.8
Average value in the tests
Reasons to consider
Gloway International (HK) STK4U2400D17041C 4GB
Report a bug
Faster write speed, GB/s
7.9
1,852.4
Average value in the tests
Higher memory bandwidth, mbps
19200
6400
Around 3 higher bandwidth
Specifications
Complete list of technical specifications
takeMS International AG TMS2GB264D082-805G 2GB
Gloway International (HK) STK4U2400D17041C 4GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
46
71
Read speed, GB/s
5,535.6
15.8
Write speed, GB/s
1,852.4
7.9
Memory bandwidth, mbps
6400
19200
Other
Description
PC2-6400, SSTL 1.8V, CAS Supported: 4 5
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
Timings / Clock speed
5-5-5-15 / 800 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
858
1757
takeMS International AG TMS2GB264D082-805G 2GB RAM comparisons
Kingmax Semiconductor KLDE88F-B8KU5 2GB
Apacer Technology GD2.0918CT.001 4GB
Gloway International (HK) STK4U2400D17041C 4GB RAM comparisons
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
takeMS International AG TMS2GB264D082-805G 2GB
Gloway International (HK) STK4U2400D17041C 4GB
SK Hynix HMT325U6CFR8C-PB 2GB
Patriot Memory (PDP Systems) 3600 C16 Series 8GB
G Skill Intl F3-1866C8-8GTX 8GB
Micron Technology 16A6A2G64HZ-2-2E1 16GB
Corsair CMZ16GX3M2A2400C10 8GB
Crucial Technology BL16G32C16U4RL.M8FB1 16GB
Nanya Technology NT4GC64C88B1NS-DI 4GB
Apacer Technology 78.D1GMM.AU10B 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Wilk Elektronik S.A. GR2400D464L17S/4G 4GB
Samsung M393B2G70BH0-YK0 16GB
Samsung M393B2G70QH0-YK0 16GB
Samsung DDR3 8GB 1600MHz 8GB
UMAX Technology 16GB
takeMS International AG TMS2GB264D082-805G 2GB
Crucial Technology CT16G4SFS8266.C8FE 16GB
Samsung M393B2G70BH0-CK0 16GB
Essencore Limited IM48GU88N26-FFFHMZ 8GB
Corsair CMX4GX3M2A1600C9 2GB
Samsung M471A5143SB1-CRC 4GB
Samsung M395T2863QZ4-CF76 1GB
Team Group Inc. DDR4 3600 8GB
G Skill Intl F3-12800CL7-4GBXM 4GB
Crucial Technology BL16G32C16U4R.M16FE 16GB
TwinMOS 8DHE3MN8-HATP 2GB
Mushkin 99[2/7/4]208F 8GB
Report a bug
×
Bug description
Source link