RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
takeMS International AG TMS2GB264D083805EV 2GB
Lenovo 16GB
Compare
takeMS International AG TMS2GB264D083805EV 2GB vs Lenovo 16GB
Overall score
takeMS International AG TMS2GB264D083805EV 2GB
Overall score
Lenovo 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
takeMS International AG TMS2GB264D083805EV 2GB
Report a bug
Faster reading speed, GB/s
3
16.4
Average value in the tests
Reasons to consider
Lenovo 16GB
Report a bug
Faster write speed, GB/s
14.9
1,457.4
Average value in the tests
Higher memory bandwidth, mbps
21300
6400
Around 3.33 higher bandwidth
Specifications
Complete list of technical specifications
takeMS International AG TMS2GB264D083805EV 2GB
Lenovo 16GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
50
50
Read speed, GB/s
3,757.3
16.4
Write speed, GB/s
1,457.4
14.9
Memory bandwidth, mbps
6400
21300
Other
Description
PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
Timings / Clock speed
5-5-5-15 / 800 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (The more the better)
557
2951
takeMS International AG TMS2GB264D083805EV 2GB RAM comparisons
Kingston 99P5316-014.A00LF 4GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Lenovo 16GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
takeMS International AG TMS2GB264D083805EV 2GB
Lenovo 16GB
Samsung M471B5673FH0-CF8 2GB
Corsair CMK64GX4M82800C14 8GB
Kingston 9965525-140.A00LF 8GB
Micron Technology 8ATF1G64HZ-2G2G1 8GB
Crucial Technology CT51264BA1339.C16F 4GB
Ramsta Ramsta-2400Mhz-4G 4GB
Samsung M378A1K43EB2-CWE 8GB
Micron Technology 8ATF1G64AZ-2G3B1 8GB
Nanya Technology NT4GC64B8HG0NS-CG 4GB
G Skill Intl F4-3600C14-16GTZR 16GB
ASint Technology SSA302G08-EGN1C 4GB
Patriot Memory (PDP Systems) PSD44G240081S 4GB
Nanya Technology NT2GT64U8HD0BN-AD 2GB
Crucial Technology BLS16G4D240FSE.16FBD 16GB
AMD R538G1601U2S 8GB
G Skill Intl F4-3466C16-8GTZR 8GB
Samsung M393B5270CH0-CH9 4GB
Kingston CAC24D4S7D8MB-16 16GB
Samsung M3 78T3354BZ0-CCC 256MB
Kingston KHX2400C15S4/4G 4GB
A-DATA Technology AM2L16BC4R1-B0AS 4GB
ATP Electronics Inc. X4C16QE8BNRCME-E-LI1 16GB
A-DATA Technology DQVE1908 512MB
Kingston XRMWRN-MIE 16GB
Kingston KVR533D2N4 512MB
Hoodisk Electronics Co Ltd MD401GNSE-CB3M2 8GB
Report a bug
×
Bug description
Source link