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takeMS International AG TMS2GB264D083805EV 2GB
Samsung M378A2G43MX3-CTD 16GB
Compare
takeMS International AG TMS2GB264D083805EV 2GB vs Samsung M378A2G43MX3-CTD 16GB
Overall score
takeMS International AG TMS2GB264D083805EV 2GB
Overall score
Samsung M378A2G43MX3-CTD 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
takeMS International AG TMS2GB264D083805EV 2GB
Report a bug
Faster reading speed, GB/s
3
15.1
Average value in the tests
Reasons to consider
Samsung M378A2G43MX3-CTD 16GB
Report a bug
Below the latency in the PassMark tests, ns
33
50
Around -52% lower latency
Faster write speed, GB/s
11.9
1,457.4
Average value in the tests
Higher memory bandwidth, mbps
21300
6400
Around 3.33 higher bandwidth
Specifications
Complete list of technical specifications
takeMS International AG TMS2GB264D083805EV 2GB
Samsung M378A2G43MX3-CTD 16GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
50
33
Read speed, GB/s
3,757.3
15.1
Write speed, GB/s
1,457.4
11.9
Memory bandwidth, mbps
6400
21300
Other
Description
PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
Timings / Clock speed
5-5-5-15 / 800 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (The more the better)
557
3224
takeMS International AG TMS2GB264D083805EV 2GB RAM comparisons
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Samsung M378A2G43MX3-CTD 16GB RAM comparisons
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RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
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