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TwinMOS 8DHE3MN8-HATP 2GB
Gloway International (HK) STKD4GAM2400-F 8GB

TwinMOS 8DHE3MN8-HATP 2GB vs Gloway International (HK) STKD4GAM2400-F 8GB

Overall score
star star star star star
TwinMOS 8DHE3MN8-HATP 2GB

TwinMOS 8DHE3MN8-HATP 2GB

Overall score
star star star star star
Gloway International (HK) STKD4GAM2400-F 8GB

Gloway International (HK) STKD4GAM2400-F 8GB

Differences Specifications Comments

Differences

TwinMOS 8DHE3MN8-HATP 2GB Reasons to consider
TwinMOS 8DHE3MN8-HATP 2GB
Report a bug
  • Faster reading speed, GB/s
    3 left arrow 14.3
    Average value in the tests
  • Faster write speed, GB/s
    870.4 left arrow 7.8
    Average value in the tests
Gloway International (HK) STKD4GAM2400-F 8GB Reasons to consider
Gloway International (HK) STKD4GAM2400-F 8GB
Report a bug
  • Below the latency in the PassMark tests, ns
    83 left arrow 87
    Around -5% lower latency
  • Higher memory bandwidth, mbps
    17000 left arrow 5300
    Around 3.21 higher bandwidth

Specifications

Complete list of technical specifications
TwinMOS 8DHE3MN8-HATP 2GB
Gloway International (HK) STKD4GAM2400-F 8GB
Main characteristics
  • Memory type
    DDR2 left arrow DDR4
  • Latency in PassMark, ns
    87 left arrow 83
  • Read speed, GB/s
    3,155.6 left arrow 14.3
  • Write speed, GB/s
    870.4 left arrow 7.8
  • Memory bandwidth, mbps
    5300 left arrow 17000
Other
  • Description
    PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-17000, 1.2V, CAS Supported: 14 15 16
  • Timings / Clock speed
    5-5-5-15 / 667 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • Ranking PassMark (The more the better)
    417 left arrow 1752

TwinMOS 8DHE3MN8-HATP 2GB RAM comparisons

takeMS International AG TMS1GB264D083805EV 1GB
Ramaxel Technology RML1520AG38D6F-667 512MB

Gloway International (HK) STKD4GAM2400-F 8GB RAM comparisons

Crucial Technology BLS4G4D240FSE.8FBD 4GB
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RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
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Latest comparisons

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