RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
TwinMOS 8DHE3MN8-HATP 2GB
Hynix Semiconductor (Hyundai Electronics) HMA82GS6AFR8N-UH 16GB
Compare
TwinMOS 8DHE3MN8-HATP 2GB vs Hynix Semiconductor (Hyundai Electronics) HMA82GS6AFR8N-UH 16GB
Overall score
TwinMOS 8DHE3MN8-HATP 2GB
Overall score
Hynix Semiconductor (Hyundai Electronics) HMA82GS6AFR8N-UH 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
TwinMOS 8DHE3MN8-HATP 2GB
Report a bug
Faster reading speed, GB/s
3
13.7
Average value in the tests
Faster write speed, GB/s
870.4
9.8
Average value in the tests
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) HMA82GS6AFR8N-UH 16GB
Report a bug
Below the latency in the PassMark tests, ns
29
87
Around -200% lower latency
Higher memory bandwidth, mbps
19200
5300
Around 3.62 higher bandwidth
Specifications
Complete list of technical specifications
TwinMOS 8DHE3MN8-HATP 2GB
Hynix Semiconductor (Hyundai Electronics) HMA82GS6AFR8N-UH 16GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
87
29
Read speed, GB/s
3,155.6
13.7
Write speed, GB/s
870.4
9.8
Memory bandwidth, mbps
5300
19200
Other
Description
PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
Timings / Clock speed
5-5-5-15 / 667 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
417
2407
TwinMOS 8DHE3MN8-HATP 2GB RAM comparisons
takeMS International AG TMS1GB264D083805EV 1GB
Ramaxel Technology RML1520AG38D6F-667 512MB
Hynix Semiconductor (Hyundai Electronics) HMA82GS6AFR8N-UH 16GB RAM comparisons
Kingston 9905403-090.A01LF 4GB
SK Hynix HMA82GS6CJR8N-UH 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Samsung M378B5673FH0-CH9 2GB
Samsung V-GeN D4S16GL26A8TL6 16GB
A-DATA Technology DQVE1908 512MB
G Skill Intl F4-2400C16-8GFT 8GB
SK Hynix HYMP164U64CP6-Y5 512MB
Kingston 9905700-025.A00G 8GB
Kingston 9905403-011.A03LF 2GB
Crucial Technology BLS4G4D240FSB.M8FBD 4GB
Samsung 1600 CL10 Series 8GB
Kingston HP32D4S2S1ME-4 4GB
A-DATA Technology DDR3 1600 4GB
G Skill Intl F4-3466C16-4GTZ 4GB
Kingston HP32D4S2S1ME-4 4GB
G Skill Intl F4-4400C18-8GTRG 8GB
PNY Electronics PNY 2GB
Smart Modular SMS4WEC8C1K0446FCG 8GB
Kreton Corporation 51624xxxx68x35xxxx 2GB
G Skill Intl F4-3600C16-16GTRSC 16GB
Micron Technology 16JTF25664AZ-1G4F1 2GB
Samsung V-GeN D4S8GL30A8TX5 8GB
Samsung M393B5170EH1-CH9 4GB
Avexir Technologies Corporation T 4GB
Smart Modular SH564128FH8NZQNSCG 4GB
Micron Technology 16ATF2G64HZ-2G3H1 16GB
Kingston KHX1600C9D3/4G 4GB
Kingston KHX1866C10D3/4G 4GB
TwinMOS 8DHE3MN8-HATP 2GB
Shanghai Kuxin Microelectronics Ltd NMUD480E82-3600 8GB
Report a bug
×
Bug description
Source link