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TwinMOS 9DCTCO4E-TATP 8GB
Crucial Technology CT16G4DFD824A.M16FH 16GB

TwinMOS 9DCTCO4E-TATP 8GB vs Crucial Technology CT16G4DFD824A.M16FH 16GB

Overall score
star star star star star
TwinMOS 9DCTCO4E-TATP 8GB

TwinMOS 9DCTCO4E-TATP 8GB

Overall score
star star star star star
Crucial Technology CT16G4DFD824A.M16FH 16GB

Crucial Technology CT16G4DFD824A.M16FH 16GB

Differences Specifications Comments

Differences

TwinMOS 9DCTCO4E-TATP 8GB Reasons to consider
TwinMOS 9DCTCO4E-TATP 8GB
Report a bug
Crucial Technology CT16G4DFD824A.M16FH 16GB Reasons to consider
Crucial Technology CT16G4DFD824A.M16FH 16GB
Report a bug
  • Below the latency in the PassMark tests, ns
    25 left arrow 29
    Around -16% lower latency
  • Faster reading speed, GB/s
    17.2 left arrow 10.5
    Average value in the tests
  • Faster write speed, GB/s
    13.0 left arrow 5.2
    Average value in the tests
  • Higher memory bandwidth, mbps
    19200 left arrow 12800
    Around 1.5 higher bandwidth

Specifications

Complete list of technical specifications
TwinMOS 9DCTCO4E-TATP 8GB
Crucial Technology CT16G4DFD824A.M16FH 16GB
Main characteristics
  • Memory type
    DDR3 left arrow DDR4
  • Latency in PassMark, ns
    29 left arrow 25
  • Read speed, GB/s
    10.5 left arrow 17.2
  • Write speed, GB/s
    5.2 left arrow 13.0
  • Memory bandwidth, mbps
    12800 left arrow 19200
Other
  • Description
    PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
  • Timings / Clock speed
    9-9-9-24 / 1600 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • Ranking PassMark (The more the better)
    1780 left arrow 3001

TwinMOS 9DCTCO4E-TATP 8GB RAM comparisons

SK Hynix GKE800UD102408-2400 8GB
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Crucial Technology CT16G4DFD824A.M16FH 16GB RAM comparisons

Samsung M378B5673EH1-CF8 2GB
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RAM Latency Calculator
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