Hynix Semiconductor (Hyundai Electronics) HMT125S6
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Hynix Semiconductor (Hyundai Electronics) HMT125S6

Review RAM Hynix Semiconductor (Hyundai Electronics) HMT125S6, specifications, benchmarks

Hynix Semiconductor (Hyundai Electronics) HMT125S6 memory module review. Main technical characteristics and benchmark performance evaluation from PassMark. We suggest studying all the data and comparing it with the competitive model.

Specifications

Complete list of technical specifications
Features
  • Type
    DDR3
  • Name
    Hynix Semiconductor (Hyundai Electronics) HMT125S6TFR8C-H9
  • Characteristics
    PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9
  • Memory bandwidth
    10600 mbps
  • Timings / Clock speed

    * check the manufacturer's website

    7-7-7-20 / 1333 MHz
Performance by PassMark
  • Latency
    29 ns
  • Read speed
    10.8 GB/s
  • Write speed
    7.9 GB/s
# 1066 1333 1600 1866 2000 2133 2400 2600 2666 2800 2933 3000 3100 3200 MT/s
7 13.13 10.50 8.75 7.50 7.00 6.56 5.83 5.38 5.25 5.00 4.77 4.67 4.52 4.38
8 15.01 12.00 10.00 8.57 8.00 7.50 6.67 6.15 6.00 5.71 5.46 5.33 5.16 5.00
9 16.89 13.50 11.25 9.65 9.00 8.44 7.50 6.92 6.75 6.43 6.14 6.00 5.81 5.63
10 18.76 15.00 12.50 10.72 10.00 9.38 8.33 7.69 7.50 7.14 6.82 6.67 6.45 6.25
11 20.64 16.50 13.75 11.79 11.00 10.31 9.17 8.46 8.25 7.86 7.50 7.33 7.10 6.88
12 22.51 18.00 15.00 12.86 12.00 11.25 10.00 9.23 9.00 8.57 8.18 8.00 7.74 7.50
13 24.39 19.50 16.25 13.93 13.00 12.19 10.83 10.00 9.75 9.29 8.86 8.67 8.39 8.13
14 26.27 21.01 17.50 15.01 14.00 13.13 11.67 10.77 10.50 10.00 9.55 9.33 9.03 8.75
15 28.14 22.51 18.75 16.08 15.00 14.06 12.50 11.54 11.25 10.71 10.23 10.00 9.68 9.38
16 30.02 24.01 20.00 17.15 16.00 15.00 13.33 12.31 12.00 11.43 10.91 10.67 10.32 10.00
CL

CAS latency measures the number of clock cycles that pass from when a request to read data is made to when such information is available

Performance tests

Real tests Hynix Semiconductor (Hyundai Electronics) HMT125S6
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Hynix Semiconductor (Hyundai Electronics) HMT125S6