Micron Technology 9HTF6472FY-667B4D3 512MB
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Micron Technology 9HTF6472FY-667B4D3 512MB

Review RAM Micron Technology 9HTF6472FY-667B4D3 512MB, specifications, benchmarks

Micron Technology 9HTF6472FY-667B4D3 512MB memory module review. Main technical characteristics and benchmark performance evaluation from PassMark. We suggest studying all the data and comparing it with the competitive model.

Specifications

Complete list of technical specifications
Features
  • Type
    DDR2
  • Name
    Micron Technology 9HTF6472FY-667B4D3
  • Characteristics
    PC-5300, PS1: 1.5V, PS2: 1.8V, CAS Supported: 3 4 5
  • Memory bandwidth
    5300 mbps
  • Timings / Clock speed

    * check the manufacturer's website

    no data
Performance by PassMark
  • Latency
    103 ns
  • Read speed
    3,135.3 GB/s
  • Write speed
    1,572.0 GB/s
# 333 400 533 667 800 933 1067 MT/s
4 12.00 10.00 7.50 6.00 5.00 4.29 3.75
5 15.00 12.50 9.38 7.50 6.25 5.36 4.69
6 18.00 15.00 11.25 9.00 7.50 6.43 5.62
7 21.00 17.50 13.13 10.50 8.75 7.50 6.56
8 24.00 20.00 15.00 12.00 10.00 8.57 7.50
9 27.00 22.50 16.88 13.50 11.25 9.64 8.44
10 30.00 25.00 18.75 15.00 12.50 10.71 9.37
11 33.00 27.50 20.63 16.50 13.75 11.79 10.31
12 36.00 30.00 22.50 18.00 15.00 12.86 11.25
CL

CAS latency measures the number of clock cycles that pass from when a request to read data is made to when such information is available

Performance tests

Real tests Micron Technology 9HTF6472FY-667B4D3 512MB
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Micron Technology 9HTF6472FY-667B4D3 512MB