RAM
DDR5
DDR4
DDR3
DDR2
Sobre el sitio
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
Sobre el sitio
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Chun Well Technology Holding Limited D4U0826190B 8GB
Compara
Crucial Technology BLS4G4D240FSE.8FBD 4GB vs Chun Well Technology Holding Limited D4U0826190B 8GB
Puntuación global
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Puntuación global
Chun Well Technology Holding Limited D4U0826190B 8GB
Diferencias
Especificaciones
Comentarios
Diferencias
Razones a tener en cuenta
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Informar de un error
Mayor velocidad de lectura, GB/s
16.9
16.7
Valor medio en las pruebas
Razones a tener en cuenta
Chun Well Technology Holding Limited D4U0826190B 8GB
Informar de un error
Mayor velocidad de escritura, GB/s
12.9
12.0
Valor medio en las pruebas
Mayor ancho de banda de la memoria, mbps
21300
19200
En 1.11 mayor ancho de banda
Especificaciones
Lista completa de especificaciones técnicas
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Chun Well Technology Holding Limited D4U0826190B 8GB
Principales características
Tipo de memoria
DDR4
DDR4
Latencia en PassMark, ns
29
29
Velocidad de lectura, GB/s
16.9
16.7
Velocidad de escritura, GB/s
12.0
12.9
Ancho de banda de la memoria, mbps
19200
21300
Other
Descripción
PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
Tiempos / Velocidad del reloj
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Clasificación PassMark (Cuanto más, mejor)
2601
3273
Crucial Technology BLS4G4D240FSE.8FBD 4GB Comparaciones de la memoria RAM
SK Hynix HMA81GS6CJR8N-VK 8GB
Crucial Technology BLS8G4D240FSCK.8FD 8GB
Chun Well Technology Holding Limited D4U0826190B 8GB Comparaciones de la memoria RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Últimas comparaciones
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS8G4D240FSA.16FADG 8GB
Kingston 9965516-112.A00LF 16GB
Gloway International (HK) STK2400CL17SNB16GB 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Boya Microelectronics Inc. AM52SE24G64AP-SQ 32GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BL16G32C16U4W.M8FB1 16GB
Samsung M393A1G40DB0-CPB 8GB
Crucial Technology CT16G4SFRA266.M16FRS 16GB
takeMS International AG TMS2GB264D082-805G 2GB
Hoodisk Electronics Co Ltd GKE800SO102408-2400 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology CT16G4SFD832A.C16FJ 16GB
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Thermaltake Technology Co Ltd R022D408GX2-4600C19A 8GB
Apacer Technology AQD-D4U8GN24-SE 8GB
Shanghai Kuxin Microelectronics Ltd NMUD480E86-3000 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology CT32G4DFD8266.C16FE 32GB
SK Hynix HMT425S6CFR6A-PB 2GB
Kingston MSI24D4S7S7MH-16 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology CT16G4SFD824A.M16FA 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Patriot Memory (PDP Systems) 4133 C19 Series 8GB
Micron Technology 18HTF12872AY-800F1 1GB
Chun Well Technology Holding Limited D4U1636144B 16GB
Informar de un error
×
Bug description
Source link