Samsung 1600 CL10 Series 8GB vs Corsair CMD16GX4M4B3000C14 4GB

Puntuación global

Samsung 1600 CL10 Series 8GB

Samsung 1600 CL10 Series 8GB

Puntuación global

Corsair CMD16GX4M4B3000C14 4GB

Corsair CMD16GX4M4B3000C14 4GB

Diferencias Especificaciones Comentarios

Diferencias

Samsung 1600 CL10 Series 8GB

Razones a tener en cuenta
Samsung 1600 CL10 Series 8GB

Informar de un error

Mayor velocidad de lectura, GB/s

16.1 15.8

Valor medio en las pruebas

Corsair CMD16GX4M4B3000C14 4GB

Razones a tener en cuenta
Corsair CMD16GX4M4B3000C14 4GB

Informar de un error

Mayor velocidad de escritura, GB/s

13.1 10.1

Valor medio en las pruebas
Mayor ancho de banda de la memoria, mbps

17000 12800

En 1.33 mayor ancho de banda

Especificaciones

Lista completa de especificaciones técnicas

Samsung 1600 CL10 Series 8GB

Corsair CMD16GX4M4B3000C14 4GB

Principales características

Tipo de memoria

DDR3 DDR4
Latencia en PassMark, ns

25 25
Velocidad de lectura, GB/s

16.1 15.8
Velocidad de escritura, GB/s

10.1 13.1
Ancho de banda de la memoria, mbps

12800 17000

Other

Descripción

PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
Tiempos / Velocidad del reloj

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Clasificación PassMark (Cuanto más, mejor)

2764 2991

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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