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Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB
Micron Technology 8ATF51264HZ-2G1A2 4GB
Comparez
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB vs Micron Technology 8ATF51264HZ-2G1A2 4GB
Note globale
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB
Note globale
Micron Technology 8ATF51264HZ-2G1A2 4GB
Différences
Spécifications
Commentaires
Différences
Raisons de considérer
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB
Signaler un bogue
En dessous de la latence dans les tests PassMark, ns
29
36
Autour de 19% latence réduite
Raisons de considérer
Micron Technology 8ATF51264HZ-2G1A2 4GB
Signaler un bogue
Vitesse de lecture plus rapide, GB/s
13.6
13.4
Valeur moyenne dans les tests
Bande passante mémoire plus élevée, mbps
17000
12800
Autour de 1.33 bande passante supérieure
Spécifications
Liste complète des spécifications techniques
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB
Micron Technology 8ATF51264HZ-2G1A2 4GB
Principales caractéristiques
Type de mémoire
DDR3
DDR4
Latence dans PassMark, ns
29
36
Vitesse de lecture, GB/s
13.4
13.6
Vitesse d'écriture, GB/s
9.0
9.0
Largeur de bande de la mémoire, mbps
12800
17000
Other
Description
PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11
PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
Timings / Vitesse d'horloge
9-9-9-24 / 1600 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Classement PassMark (Plus il y en a, mieux c'est)
2423
1778
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB Comparaison des RAM
Hynix Semiconductor (Hyundai Electronics) HMT451U6BFR8C-PB 4GB
Corsair CMW16GX4M2Z4000C18 8GB
Micron Technology 8ATF51264HZ-2G1A2 4GB Comparaison des RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Corsair CMD8GX3M2A2933C12 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
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Signaler un bogue
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Bug description
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