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Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB
Panram International Corporation PUD42133C138G4NJK 8GB
Comparez
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB vs Panram International Corporation PUD42133C138G4NJK 8GB
Note globale
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB
Note globale
Panram International Corporation PUD42133C138G4NJK 8GB
Différences
Spécifications
Commentaires
Différences
Raisons de considérer
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB
Signaler un bogue
En dessous de la latence dans les tests PassMark, ns
29
74
Autour de 61% latence réduite
Raisons de considérer
Panram International Corporation PUD42133C138G4NJK 8GB
Signaler un bogue
Vitesse de lecture plus rapide, GB/s
14.9
13.4
Valeur moyenne dans les tests
Bande passante mémoire plus élevée, mbps
17000
12800
Autour de 1.33 bande passante supérieure
Spécifications
Liste complète des spécifications techniques
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB
Panram International Corporation PUD42133C138G4NJK 8GB
Principales caractéristiques
Type de mémoire
DDR3
DDR4
Latence dans PassMark, ns
29
74
Vitesse de lecture, GB/s
13.4
14.9
Vitesse d'écriture, GB/s
9.0
9.0
Largeur de bande de la mémoire, mbps
12800
17000
Other
Description
PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11
PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13
Timings / Vitesse d'horloge
9-9-9-24 / 1600 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Classement PassMark (Plus il y en a, mieux c'est)
2423
1925
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB Comparaison des RAM
Hynix Semiconductor (Hyundai Electronics) HMT451U6BFR8C-PB 4GB
Corsair CMW16GX4M2Z4000C18 8GB
Panram International Corporation PUD42133C138G4NJK 8GB Comparaison des RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Dernières comparaisons
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C
Panram International Corporation PUD42133C138G4NJK 8GB
Samsung M471A1K43CB1-CRC 8GB
Samsung M471A1K43BB1-CRC 8GB
Kingston KHX2133C11D3/4GX 4GB
G Skill Intl F4-2800C15-8GVSB 8GB
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A
Gloway International Co. Ltd. TYA4U2666D19321C 32GB
Crucial Technology BLT16G4D30AETA.K16FB 16GB
Crucial Technology BLS8G4D32AESTK.M8FE 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Patriot Memory (PDP Systems) 3600 C17 Series 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston KF2666C13D4/8GX 8GB
Kingston 9905403-444.A00LF 4GB
Apacer Technology 78.DAGP2.4030B 16GB
Ramaxel Technology RMT3010EC58E8F1333 2GB
Micron Technology 16ATF1G64AZ-2G1A1 8GB
Samsung M393B1G70BH0-CK0 8GB
Avexir Technologies Corporation DDR4-2133 CL15 4GB 4GB
A-DATA Technology AM2L16BC4R1-B0AS 4GB
Samsung M471A5244BB0-CRC 4GB
SK Hynix HMT351U6CFR8C-H9 4GB
Kingston 9905702-012.A00G 8GB
Kingston 9965516-049.A00LF 8GB
Avexir Technologies Corporation DDR3-1333 CL9 4GB
Samsung M471B5673FH0-CF8 2GB
Corsair CMW64GX4M4A2666C16 16GB
Signaler un bogue
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Bug description
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