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Samsung M3 78T3354BZ0-CCC 256MB
SK Hynix HMA82GR7JJR8N-VK 16GB

Samsung M3 78T3354BZ0-CCC 256MB vs SK Hynix HMA82GR7JJR8N-VK 16GB

Note globale
star star star star star
Samsung M3 78T3354BZ0-CCC 256MB

Samsung M3 78T3354BZ0-CCC 256MB

Note globale
star star star star star
SK Hynix HMA82GR7JJR8N-VK 16GB

SK Hynix HMA82GR7JJR8N-VK 16GB

Différences Spécifications Commentaires

Différences

Samsung M3 78T3354BZ0-CCC 256MB Raisons de considérer
Samsung M3 78T3354BZ0-CCC 256MB
Signaler un bogue
  • Vitesse de lecture plus rapide, GB/s
    2 left arrow 11.6
    Valeur moyenne dans les tests
SK Hynix HMA82GR7JJR8N-VK 16GB Raisons de considérer
SK Hynix HMA82GR7JJR8N-VK 16GB
Signaler un bogue
  • Vitesse d'écriture plus rapide, GB/s
    9.1 left arrow 1,519.2
    Valeur moyenne dans les tests
  • Bande passante mémoire plus élevée, mbps
    21300 left arrow 3200
    Autour de 6.66 bande passante supérieure

Spécifications

Liste complète des spécifications techniques
Samsung M3 78T3354BZ0-CCC 256MB
SK Hynix HMA82GR7JJR8N-VK 16GB
Principales caractéristiques
  • Type de mémoire
    DDR2 left arrow DDR4
  • Latence dans PassMark, ns
    46 left arrow 46
  • Vitesse de lecture, GB/s
    2,909.8 left arrow 11.6
  • Vitesse d'écriture, GB/s
    1,519.2 left arrow 9.1
  • Largeur de bande de la mémoire, mbps
    3200 left arrow 21300
Other
  • Description
    PC2-3200, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • Timings / Vitesse d'horloge
    3-3-3-12 / 400 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • Classement PassMark (Plus il y en a, mieux c'est)
    241 left arrow 2571

Samsung M3 78T3354BZ0-CCC 256MB Comparaison des RAM

Samsung M4 70T3354BZ0-CCC 256MB
Kreton Corporation 51621xxxx68x35xxxx 2GB

SK Hynix HMA82GR7JJR8N-VK 16GB Comparaison des RAM

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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