Samsung M378T5663QZ3-CF7 2GB vs Kingston HP26D4S9S8MHF-8 8GB

Note globale

Samsung M378T5663QZ3-CF7 2GB

Samsung M378T5663QZ3-CF7 2GB

Note globale

Kingston HP26D4S9S8MHF-8 8GB

Kingston HP26D4S9S8MHF-8 8GB

Différences Spécifications Commentaires

Différences

Samsung M378T5663QZ3-CF7 2GB

Raisons de considérer
Samsung M378T5663QZ3-CF7 2GB

Signaler un bogue

Vitesse de lecture plus rapide, GB/s

4 14.8

Valeur moyenne dans les tests

Kingston HP26D4S9S8MHF-8 8GB

Raisons de considérer
Kingston HP26D4S9S8MHF-8 8GB

Signaler un bogue

En dessous de la latence dans les tests PassMark, ns

36 56

Autour de -56% latence réduite
Vitesse d'écriture plus rapide, GB/s

12.0 1,813.5

Valeur moyenne dans les tests
Bande passante mémoire plus élevée, mbps

21300 6400

Autour de 3.33 bande passante supérieure

Spécifications

Liste complète des spécifications techniques

Samsung M378T5663QZ3-CF7 2GB

Kingston HP26D4S9S8MHF-8 8GB

Principales caractéristiques

Type de mémoire

DDR2 DDR4
Latence dans PassMark, ns

56 36
Vitesse de lecture, GB/s

4,387.7 14.8
Vitesse d'écriture, GB/s

1,813.5 12.0
Largeur de bande de la mémoire, mbps

6400 21300

Other

Description

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
Timings / Vitesse d'horloge

5-5-5-15 / 800 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Classement PassMark (Plus il y en a, mieux c'est)

693 2711

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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