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A-DATA Technology VDQVE1B16 2GB
Samsung M393A1G40EB1-CPB 8GB

A-DATA Technology VDQVE1B16 2GB vs Samsung M393A1G40EB1-CPB 8GB

Punteggio complessivo
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A-DATA Technology VDQVE1B16 2GB

A-DATA Technology VDQVE1B16 2GB

Punteggio complessivo
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Samsung M393A1G40EB1-CPB 8GB

Samsung M393A1G40EB1-CPB 8GB

Differenze Specifiche tecniche Commenti

Differenze

A-DATA Technology VDQVE1B16 2GB Motivi da considerare
A-DATA Technology VDQVE1B16 2GB
Segnala un bug
  • Velocità di lettura più elevata, GB/s
    4 left arrow 11
    Valore medio nei test
Samsung M393A1G40EB1-CPB 8GB Motivi da considerare
Samsung M393A1G40EB1-CPB 8GB
Segnala un bug
  • Velocità di scrittura più elevata, GB/s
    8.7 left arrow 2,061.2
    Valore medio nei test
  • Larghezza di banda di memoria superiore, mbps
    17000 left arrow 6400
    Intorno 2.66 larghezza di banda superiore

Specifiche tecniche

Elenco completo delle specifiche tecniche
A-DATA Technology VDQVE1B16 2GB
Samsung M393A1G40EB1-CPB 8GB
Caratteristiche principali
  • Tipo di memoria
    DDR2 left arrow DDR4
  • Latenza in PassMark, ns
    46 left arrow 46
  • Velocità di lettura, GB/s
    4,937.3 left arrow 11.0
  • Velocità di scrittura, GB/s
    2,061.2 left arrow 8.7
  • Larghezza di banda della memoria, mbps
    6400 left arrow 17000
Other
  • Descrizione
    PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • Temporizzazioni / Velocità di clock
    5-5-5-15 / 800 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • Classifica PassMark (più sono, meglio è)
    759 left arrow 2481

A-DATA Technology VDQVE1B16 2GB Confronto tra le RAM

takeMS International AG TMS2GS264D082665EQ 2GB
Qimonda 64T64000EU3SB2 512MB

Samsung M393A1G40EB1-CPB 8GB Confronto tra le RAM

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

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