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Hynix Semiconductor (Hyundai Electronics) HMT351S6EFR8C-PB 4GB
SK Hynix HMT351S6EFR8C-PB 4GB

Hynix Semiconductor (Hyundai Electronics) HMT351S6EFR8C-PB 4GB vs SK Hynix HMT351S6EFR8C-PB 4GB

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Hynix Semiconductor (Hyundai Electronics) HMT351S6EFR8C-PB 4GB

Hynix Semiconductor (Hyundai Electronics) HMT351S6EFR8C-PB 4GB

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SK Hynix HMT351S6EFR8C-PB 4GB

SK Hynix HMT351S6EFR8C-PB 4GB

Differenze Specifiche tecniche Commenti

Differenze

Hynix Semiconductor (Hyundai Electronics) HMT351S6EFR8C-PB 4GB Motivi da considerare
Hynix Semiconductor (Hyundai Electronics) HMT351S6EFR8C-PB 4GB
Segnala un bug
  • Al di sotto della latenza nei test PassMark, ns
    31 left arrow 43
    Intorno 28% latenza inferiore
SK Hynix HMT351S6EFR8C-PB 4GB Motivi da considerare
SK Hynix HMT351S6EFR8C-PB 4GB
Segnala un bug
  • Velocità di lettura più elevata, GB/s
    12.5 left arrow 12
    Valore medio nei test
  • Velocità di scrittura più elevata, GB/s
    8.8 left arrow 8.6
    Valore medio nei test

Specifiche tecniche

Elenco completo delle specifiche tecniche
Hynix Semiconductor (Hyundai Electronics) HMT351S6EFR8C-PB 4GB
SK Hynix HMT351S6EFR8C-PB 4GB
Caratteristiche principali
  • Tipo di memoria
    DDR3 left arrow DDR3
  • Latenza in PassMark, ns
    31 left arrow 43
  • Velocità di lettura, GB/s
    12.0 left arrow 12.5
  • Velocità di scrittura, GB/s
    8.6 left arrow 8.8
  • Larghezza di banda della memoria, mbps
    12800 left arrow 12800
Other
  • Descrizione
    PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 left arrow PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11
  • Temporizzazioni / Velocità di clock
    9-9-9-24 / 1600 MHz left arrow 9-9-9-24 / 1600 MHz
  • Classifica PassMark (più sono, meglio è)
    2066 left arrow 1993

Hynix Semiconductor (Hyundai Electronics) HMT351S6EFR8C-PB 4GB Confronto tra le RAM

SK Hynix HMT351S6CFR8C-PB 4GB

SK Hynix HMT351S6EFR8C-PB 4GB Confronto tra le RAM

AMD R538G1601U2S 8GB
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