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Hynix Semiconductor (Hyundai Electronics) HMT451S6BFR8A-PB 4GB
SK Hynix HMT451S6AFR8A-PB 4GB

Hynix Semiconductor (Hyundai Electronics) HMT451S6BFR8A-PB 4GB vs SK Hynix HMT451S6AFR8A-PB 4GB

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Hynix Semiconductor (Hyundai Electronics) HMT451S6BFR8A-PB 4GB

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SK Hynix HMT451S6AFR8A-PB 4GB

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Differenze Specifiche tecniche Commenti

Differenze

Hynix Semiconductor (Hyundai Electronics) HMT451S6BFR8A-PB 4GB Motivi da considerare
Hynix Semiconductor (Hyundai Electronics) HMT451S6BFR8A-PB 4GB
Segnala un bug
  • Al di sotto della latenza nei test PassMark, ns
    32 left arrow 44
    Intorno 27% latenza inferiore
SK Hynix HMT451S6AFR8A-PB 4GB Motivi da considerare
SK Hynix HMT451S6AFR8A-PB 4GB
Segnala un bug
  • Velocità di lettura più elevata, GB/s
    12.3 left arrow 11.5
    Valore medio nei test
  • Velocità di scrittura più elevata, GB/s
    7.9 left arrow 7.4
    Valore medio nei test

Specifiche tecniche

Elenco completo delle specifiche tecniche
Hynix Semiconductor (Hyundai Electronics) HMT451S6BFR8A-PB 4GB
SK Hynix HMT451S6AFR8A-PB 4GB
Caratteristiche principali
  • Tipo di memoria
    DDR3 left arrow DDR3
  • Latenza in PassMark, ns
    32 left arrow 44
  • Velocità di lettura, GB/s
    11.5 left arrow 12.3
  • Velocità di scrittura, GB/s
    7.4 left arrow 7.9
  • Larghezza di banda della memoria, mbps
    12800 left arrow 12800
Other
  • Descrizione
    PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 left arrow PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11
  • Temporizzazioni / Velocità di clock
    9-9-9-24 / 1600 MHz left arrow 9-9-9-24 / 1600 MHz
  • Classifica PassMark (più sono, meglio è)
    1919 left arrow 2022

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