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Kingmax Semiconductor FLFF65F-C8KL9 4GB
Nanya Technology M2F4G64CB8HG5N-CG 4GB

Kingmax Semiconductor FLFF65F-C8KL9 4GB vs Nanya Technology M2F4G64CB8HG5N-CG 4GB

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Kingmax Semiconductor FLFF65F-C8KL9 4GB

Kingmax Semiconductor FLFF65F-C8KL9 4GB

Punteggio complessivo
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Nanya Technology M2F4G64CB8HG5N-CG 4GB

Nanya Technology M2F4G64CB8HG5N-CG 4GB

Differenze Specifiche tecniche Commenti

Differenze

Kingmax Semiconductor FLFF65F-C8KL9 4GB Motivi da considerare
Kingmax Semiconductor FLFF65F-C8KL9 4GB
Segnala un bug
  • Al di sotto della latenza nei test PassMark, ns
    26 left arrow 41
    Intorno 37% latenza inferiore
Nanya Technology M2F4G64CB8HG5N-CG 4GB Motivi da considerare
Nanya Technology M2F4G64CB8HG5N-CG 4GB
Segnala un bug
  • Velocità di lettura più elevata, GB/s
    13.3 left arrow 12.4
    Valore medio nei test
  • Velocità di scrittura più elevata, GB/s
    8.2 left arrow 7.6
    Valore medio nei test

Specifiche tecniche

Elenco completo delle specifiche tecniche
Kingmax Semiconductor FLFF65F-C8KL9 4GB
Nanya Technology M2F4G64CB8HG5N-CG 4GB
Caratteristiche principali
  • Tipo di memoria
    DDR3 left arrow DDR3
  • Latenza in PassMark, ns
    26 left arrow 41
  • Velocità di lettura, GB/s
    12.4 left arrow 13.3
  • Velocità di scrittura, GB/s
    7.6 left arrow 8.2
  • Larghezza di banda della memoria, mbps
    10600 left arrow 10600
Other
  • Descrizione
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9
  • Temporizzazioni / Velocità di clock
    7-7-7-20 / 1333 MHz left arrow 7-7-7-20 / 1333 MHz
  • Classifica PassMark (più sono, meglio è)
    2080 left arrow 1982

Kingmax Semiconductor FLFF65F-C8KL9 4GB Confronto tra le RAM

Crucial Technology RM51264BA1339.16FR 4GB
Samsung M378B5173CB0-CK0 4GB

Nanya Technology M2F4G64CB8HG5N-CG 4GB Confronto tra le RAM

Elpida EBJ21UE8BDF0-DJ-F 2GB
Micron Technology 8ATF2G64HZ-3G2E2 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

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