Kingston 99U5711-001.A00G 4GB vs Samsung M471A5244BB0-CRC 4GB

Punteggio complessivo

Kingston 99U5711-001.A00G 4GB

Kingston 99U5711-001.A00G 4GB

Punteggio complessivo

Samsung M471A5244BB0-CRC 4GB

Samsung M471A5244BB0-CRC 4GB

Differenze Specifiche tecniche Commenti

Differenze

Kingston 99U5711-001.A00G 4GB

Motivi da considerare
Kingston 99U5711-001.A00G 4GB

Velocità di lettura più elevata, GB/s

14.5 14

Valore medio nei test

Samsung M471A5244BB0-CRC 4GB

Motivi da considerare
Samsung M471A5244BB0-CRC 4GB

Al di sotto della latenza nei test PassMark, ns

38 101

Intorno -166% latenza inferiore
Velocità di scrittura più elevata, GB/s

10.4 6.0

Valore medio nei test

Specifiche tecniche

Elenco completo delle specifiche tecniche

Kingston 99U5711-001.A00G 4GB

Samsung M471A5244BB0-CRC 4GB

Caratteristiche principali

Tipo di memoria

DDR4 DDR4
Latenza in PassMark, ns

101 38
Velocità di lettura, GB/s

14.5 14.0
Velocità di scrittura, GB/s

6.0 10.4
Larghezza di banda della memoria, mbps

19200 19200

Other

Descrizione

PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
Temporizzazioni / Velocità di clock

15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Classifica PassMark (più sono, meglio è)

1369 2055

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

Ultimi confronti

Nanya Technology M2X4G64CB8HG9N-DG 4GB

Nanya Technology M2X4G64CB8HG9N-DG 4GB

Kingston 9905701-010.A00G 16GB

Kingston 9905701-010.A00G 16GB

Wilk Elektronik S.A. GY1866D364L9A/4G 4GB

Wilk Elektronik S.A. GY1866D364L9A/4G 4GB

Chun Well Technology Holding Limited MD4U1636181DCW 16GB

Chun Well Technology Holding Limited MD4U1636181DCW 16G

Kingston 99U5711-001.A00G 4GB

Kingston 99U5711-001.A00G 4GB

Samsung M471A5244BB0-CRC 4GB

Samsung M471A5244BB0-CRC 4GB

Kingston 9965525-018.A00LF 4GB

Kingston 9965525-018.A00LF 4GB

Samsung M386A2G40DB0-CPB 16GB

Samsung M386A2G40DB0-CPB 16GB

A-DATA Technology ADOVE1A0834E 1GB

A-DATA Technology ADOVE1A0834E 1GB

Crucial Technology BLS4G4D240FSA.8FBD 4GB

Crucial Technology BLS4G4D240FSA.8FBD 4GB

G Skill Intl F3-1333C9-4GIS 4GB

G Skill Intl F3-1333C9-4GIS 4GB

Crucial Technology CT8G4DFS824A.M8FB 8GB

Crucial Technology CT8G4DFS824A.M8FB 8GB

PNY Electronics PNY 2GB

PNY Electronics PNY 2GB

Hoodisk Electronics Co Ltd GKE160SO102408-2400 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB

Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8

G Skill Intl F4-3200C16-16GSXWB 16GB

G Skill Intl F4-3200C16-16GSXWB 16GB

Kingston 9905469-143.A00LF 4GB

Kingston 9905469-143.A00LF 4GB

G Skill Intl F4-4133C19-8GTZKWC 8GB

G Skill Intl F4-4133C19-8GTZKWC 8GB

Samsung M378B1G73EB0-CK0 8GB

Samsung M378B1G73EB0-CK0 8GB

Crucial Technology CT8G4DFS8213.C8FBR1 8GB

Crucial Technology CT8G4DFS8213.C8FBR1 8GB

Kingston 9905403-090.A01LF 4GB

Kingston 9905403-090.A01LF 4GB

SanMax Technologies Inc. SMD4-U16G48MJ-32AA 16GB

SanMax Technologies Inc. SMD4-U16G48MJ-32AA 16GB

Nanya Technology M2Y51264TU88B0B-3C 512MB

Nanya Technology M2Y51264TU88B0B-3C 512MB

Micron Technology 8ATF2G64HZ-2G3A1 16GB

Micron Technology 8ATF2G64HZ-2G3A1 16GB

SK Hynix HMT151R7TFR4C-H9 4GB

SK Hynix HMT151R7TFR4C-H9 4GB

Kingston 9905624-014.A00G 4GB

Kingston 9905624-014.A00G 4GB

Kingston K1N7HK-ELC 2GB

Kingston K1N7HK-ELC 2GB

G Skill Intl F4-2800C15-8GVSB 8GB

G Skill Intl F4-2800C15-8GVSB 8GB