Micron Technology 16JTF25664AZ-1G4F1 2GB vs Samsung M471A1K1KBB0-CPB 8GB

Punteggio complessivo

Micron Technology 16JTF25664AZ-1G4F1 2GB

Micron Technology 16JTF25664AZ-1G4F1 2GB

Punteggio complessivo

Samsung M471A1K1KBB0-CPB 8GB

Samsung M471A1K1KBB0-CPB 8GB

Differenze Specifiche tecniche Commenti

Differenze

Micron Technology 16JTF25664AZ-1G4F1 2GB

Motivi da considerare
Micron Technology 16JTF25664AZ-1G4F1 2GB

Velocità di lettura più elevata, GB/s

13.6 11.7

Valore medio nei test
Velocità di scrittura più elevata, GB/s

8.3 5.5

Valore medio nei test

Samsung M471A1K1KBB0-CPB 8GB

Motivi da considerare
Samsung M471A1K1KBB0-CPB 8GB

Al di sotto della latenza nei test PassMark, ns

26 40

Intorno -54% latenza inferiore
Larghezza di banda di memoria superiore, mbps

17000 10600

Intorno 1.6 larghezza di banda superiore

Specifiche tecniche

Elenco completo delle specifiche tecniche

Micron Technology 16JTF25664AZ-1G4F1 2GB

Samsung M471A1K1KBB0-CPB 8GB

Caratteristiche principali

Tipo di memoria

DDR3 DDR4
Latenza in PassMark, ns

40 26
Velocità di lettura, GB/s

13.6 11.7
Velocità di scrittura, GB/s

8.3 5.5
Larghezza di banda della memoria, mbps

10600 17000

Other

Descrizione

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 10 PC4-17000, , CAS Supported: 10 11 12 13 14 15 16
Temporizzazioni / Velocità di clock

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Classifica PassMark (più sono, meglio è)

2035 1771

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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