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Nanya Technology NT4GC64B8HG0NS-CG 4GB
Corsair CMSO4GX3M1A1333C9 4GB

Nanya Technology NT4GC64B8HG0NS-CG 4GB vs Corsair CMSO4GX3M1A1333C9 4GB

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Nanya Technology NT4GC64B8HG0NS-CG 4GB

Nanya Technology NT4GC64B8HG0NS-CG 4GB

Punteggio complessivo
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Corsair CMSO4GX3M1A1333C9 4GB

Corsair CMSO4GX3M1A1333C9 4GB

Differenze Specifiche tecniche Commenti

Differenze

Nanya Technology NT4GC64B8HG0NS-CG 4GB Motivi da considerare
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Segnala un bug
  • Al di sotto della latenza nei test PassMark, ns
    42 left arrow 43
    Intorno 2% latenza inferiore
Corsair CMSO4GX3M1A1333C9 4GB Motivi da considerare
Corsair CMSO4GX3M1A1333C9 4GB
Segnala un bug
  • Velocità di lettura più elevata, GB/s
    11.8 left arrow 9.7
    Valore medio nei test
  • Velocità di scrittura più elevata, GB/s
    8.0 left arrow 6.0
    Valore medio nei test

Specifiche tecniche

Elenco completo delle specifiche tecniche
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Corsair CMSO4GX3M1A1333C9 4GB
Caratteristiche principali
  • Tipo di memoria
    DDR3 left arrow DDR3
  • Latenza in PassMark, ns
    42 left arrow 43
  • Velocità di lettura, GB/s
    9.7 left arrow 11.8
  • Velocità di scrittura, GB/s
    6.0 left arrow 8.0
  • Larghezza di banda della memoria, mbps
    10600 left arrow 10600
Other
  • Descrizione
    PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 left arrow PC3-10600, 1.5V, CAS Supported: 6 7 8 9
  • Temporizzazioni / Velocità di clock
    7-7-7-20 / 1333 MHz left arrow 7-7-7-20 / 1333 MHz
  • Classifica PassMark (più sono, meglio è)
    1396 left arrow 1889

Nanya Technology NT4GC64B8HG0NS-CG 4GB Confronto tra le RAM

Corsair CMY8GX3M2A2666C10 4GB

Corsair CMSO4GX3M1A1333C9 4GB Confronto tra le RAM

Samsung M471B5273DH0-CH9 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

Ultimi confronti

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Nanya Technology NT4GC64B8HG0NS-CG 4GB
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Samsung M378B5273CH0-CH9 4GB
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