Samsung M3 78T5663EH3-CF7 2GB vs DSL Memory D4SS12081SH21A-A 4GB

Punteggio complessivo

Samsung M3 78T5663EH3-CF7 2GB

Samsung M3 78T5663EH3-CF7 2GB

Punteggio complessivo

DSL Memory D4SS12081SH21A-A 4GB

DSL Memory D4SS12081SH21A-A 4GB

Differenze Specifiche tecniche Commenti

Differenze

Samsung M3 78T5663EH3-CF7 2GB

Motivi da considerare
Samsung M3 78T5663EH3-CF7 2GB

Velocità di lettura più elevata, GB/s

4 13.2

Valore medio nei test

DSL Memory D4SS12081SH21A-A 4GB

Motivi da considerare
DSL Memory D4SS12081SH21A-A 4GB

Al di sotto della latenza nei test PassMark, ns

28 65

Intorno -132% latenza inferiore
Velocità di scrittura più elevata, GB/s

5.8 2,451.8

Valore medio nei test
Larghezza di banda di memoria superiore, mbps

17000 6400

Intorno 2.66 larghezza di banda superiore

Specifiche tecniche

Elenco completo delle specifiche tecniche

Samsung M3 78T5663EH3-CF7 2GB

DSL Memory D4SS12081SH21A-A 4GB

Caratteristiche principali

Tipo di memoria

DDR2 DDR4
Latenza in PassMark, ns

65 28
Velocità di lettura, GB/s

4,605.9 13.2
Velocità di scrittura, GB/s

2,451.8 5.8
Larghezza di banda della memoria, mbps

6400 17000

Other

Descrizione

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
Temporizzazioni / Velocità di clock

5-5-5-15 / 800 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Classifica PassMark (più sono, meglio è)

878 1699

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

Ultimi confronti

SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB

SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB

V-Color Technology Inc. TN48G24S817-VHA/R 8GB

V-Color Technology Inc. TN48G24S817-VHA/R 8GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Micron Technology 16ATF2G64HZ-2G3H1 16GB

Micron Technology 16ATF2G64HZ-2G3H1 16GB

Crucial Technology BLS4G4D240FSE.M8FADM 4GB

Crucial Technology BLS4G4D240FSE.M8FADM 4GB

Corsair CMU16GX4M2D3000C16 8GB

Corsair CMU16GX4M2D3000C16 8GB

Patriot Memory (PDP Systems) PSD38G1600L2S 8GB

Patriot Memory (PDP Systems) PSD38G1600L2S 8GB

G Skill Intl F4-2133C15-8GRB 8GB

G Skill Intl F4-2133C15-8GRB 8GB

takeMS International AG TMS2GB264D083805EV 2GB

takeMS International AG TMS2GB264D083805EV 2GB

Kingston CBD24D4S7D8MB-16 16GB

Kingston CBD24D4S7D8MB-16 16GB

Corsair CML8GX3M2A1600C9 4GB

Corsair CML8GX3M2A1600C9 4GB

Corsair CMK16GX4M2F4400C19 8GB

Corsair CMK16GX4M2F4400C19 8GB

G Skill Intl F3-12800CL7-4GBXM 4GB

G Skill Intl F3-12800CL7-4GBXM 4GB

Micron Technology 9ASF51272PZ-2G1B1 4GB

Micron Technology 9ASF51272PZ-2G1B1 4GB

Samsung M471A5244CB0-CWE 4GB

Samsung M471A5244CB0-CWE 4GB

Micron Technology 8ATF1G64AZ-2G3H1R 8GB

Micron Technology 8ATF1G64AZ-2G3H1R 8GB

Corsair CMZ32GX3M4A1866C9 8GB

Corsair CMZ32GX3M4A1866C9 8GB

Micron Technology 36ASF2G72PZ-2G1A2 16GB

Micron Technology 36ASF2G72PZ-2G1A2 16GB

Kingston 99U5403-083.A00LF 8GB

Kingston 99U5403-083.A00LF 8GB

Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR4N-TF 8GB

Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR4N

Unifosa Corporation HU564404EP0200 4GB

Unifosa Corporation HU564404EP0200 4GB

Crucial Technology CT32G4SFD8266.C16FE 32GB

Crucial Technology CT32G4SFD8266.C16FE 32GB

G Skill Intl F5-6400J3239G16G 16GB

G Skill Intl F5-6400J3239G16G 16GB

G Skill Intl F4-4133C19-8GTZSWC 8GB

G Skill Intl F4-4133C19-8GTZSWC 8GB

A-DATA Technology DQVE1908 512MB

A-DATA Technology DQVE1908 512MB

Kingmax Semiconductor GSAH22F-18---------- 16GB

Kingmax Semiconductor GSAH22F-18---------- 16GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Crucial Technology BLS16G4D240FSB.16FAD 16GB

Crucial Technology BLS16G4D240FSB.16FAD 16GB