Samsung M378B5273CH0-CH9 4GB vs Micron Technology 18ASF1G72PDZ-2G3A2 8GB

Punteggio complessivo

Samsung M378B5273CH0-CH9 4GB

Samsung M378B5273CH0-CH9 4GB

Punteggio complessivo

Micron Technology 18ASF1G72PDZ-2G3A2 8GB

Micron Technology 18ASF1G72PDZ-2G3A2 8GB

Differenze Specifiche tecniche Commenti

Differenze

Samsung M378B5273CH0-CH9 4GB

Motivi da considerare
Samsung M378B5273CH0-CH9 4GB

Velocità di lettura più elevata, GB/s

13.2 10.3

Valore medio nei test
Velocità di scrittura più elevata, GB/s

8.4 8.1

Valore medio nei test

Micron Technology 18ASF1G72PDZ-2G3A2 8GB

Motivi da considerare
Micron Technology 18ASF1G72PDZ-2G3A2 8GB

Al di sotto della latenza nei test PassMark, ns

33 37

Intorno -12% latenza inferiore
Larghezza di banda di memoria superiore, mbps

19200 10600

Intorno 1.81 larghezza di banda superiore

Specifiche tecniche

Elenco completo delle specifiche tecniche

Samsung M378B5273CH0-CH9 4GB

Micron Technology 18ASF1G72PDZ-2G3A2 8GB

Caratteristiche principali

Tipo di memoria

DDR3 DDR4
Latenza in PassMark, ns

37 33
Velocità di lettura, GB/s

13.2 10.3
Velocità di scrittura, GB/s

8.4 8.1
Larghezza di banda della memoria, mbps

10600 19200

Other

Descrizione

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
Temporizzazioni / Velocità di clock

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Classifica PassMark (più sono, meglio è)

2143 2235

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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