Samsung M378B5273EB0-CK0 4GB vs SK Hynix HMA451U7AFR8N-TF 4GB

Punteggio complessivo

Samsung M378B5273EB0-CK0 4GB

Samsung M378B5273EB0-CK0 4GB

Punteggio complessivo

SK Hynix HMA451U7AFR8N-TF 4GB

SK Hynix HMA451U7AFR8N-TF 4GB

Differenze Specifiche tecniche Commenti

Differenze

Samsung M378B5273EB0-CK0 4GB

Motivi da considerare
Samsung M378B5273EB0-CK0 4GB

Velocità di lettura più elevata, GB/s

14.6 13.2

Valore medio nei test
Velocità di scrittura più elevata, GB/s

9.6 8.9

Valore medio nei test

SK Hynix HMA451U7AFR8N-TF 4GB

Motivi da considerare
SK Hynix HMA451U7AFR8N-TF 4GB

Al di sotto della latenza nei test PassMark, ns

29 37

Intorno -28% latenza inferiore
Larghezza di banda di memoria superiore, mbps

17000 12800

Intorno 1.33 larghezza di banda superiore

Specifiche tecniche

Elenco completo delle specifiche tecniche

Samsung M378B5273EB0-CK0 4GB

SK Hynix HMA451U7AFR8N-TF 4GB

Caratteristiche principali

Tipo di memoria

DDR3 DDR4
Latenza in PassMark, ns

37 29
Velocità di lettura, GB/s

14.6 13.2
Velocità di scrittura, GB/s

9.6 8.9
Larghezza di banda della memoria, mbps

12800 17000

Other

Descrizione

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
Temporizzazioni / Velocità di clock

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Classifica PassMark (più sono, meglio è)

2409 2284

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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