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Samsung M378B5673EH1-CF8 2GB
Apacer Technology 78.B1GS6.AUC0B 4GB

Samsung M378B5673EH1-CF8 2GB vs Apacer Technology 78.B1GS6.AUC0B 4GB

Punteggio complessivo
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Samsung M378B5673EH1-CF8 2GB

Samsung M378B5673EH1-CF8 2GB

Punteggio complessivo
star star star star star
Apacer Technology 78.B1GS6.AUC0B 4GB

Apacer Technology 78.B1GS6.AUC0B 4GB

Differenze Specifiche tecniche Commenti

Differenze

Samsung M378B5673EH1-CF8 2GB Motivi da considerare
Samsung M378B5673EH1-CF8 2GB
Segnala un bug
  • Velocità di lettura più elevata, GB/s
    12.7 left arrow 11.7
    Valore medio nei test
  • Velocità di scrittura più elevata, GB/s
    7.5 left arrow 6.0
    Valore medio nei test
Apacer Technology 78.B1GS6.AUC0B 4GB Motivi da considerare
Apacer Technology 78.B1GS6.AUC0B 4GB
Segnala un bug
  • Larghezza di banda di memoria superiore, mbps
    21300 left arrow 8500
    Intorno 2.51 larghezza di banda superiore

Specifiche tecniche

Elenco completo delle specifiche tecniche
Samsung M378B5673EH1-CF8 2GB
Apacer Technology 78.B1GS6.AUC0B 4GB
Caratteristiche principali
  • Tipo di memoria
    DDR3 left arrow DDR4
  • Latenza in PassMark, ns
    28 left arrow 28
  • Velocità di lettura, GB/s
    12.7 left arrow 11.7
  • Velocità di scrittura, GB/s
    7.5 left arrow 6.0
  • Larghezza di banda della memoria, mbps
    8500 left arrow 21300
Other
  • Descrizione
    PC3-8500, 1.5V, CAS Supported: 6 7 8 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • Temporizzazioni / Velocità di clock
    7-7-7-20 / 1066 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • Classifica PassMark (più sono, meglio è)
    1988 left arrow 1426

Samsung M378B5673EH1-CF8 2GB Confronto tra le RAM

Nanya Technology M2X4G64CB8HG5N-DG 4GB
Kingston 9905403-831.A00LF 8GB

Apacer Technology 78.B1GS6.AUC0B 4GB Confronto tra le RAM

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
TwinMOS 8DPT5MK8-TATP 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

Ultimi confronti

Samsung M378B5673EH1-CF8 2GB
Samsung M378B5673EH1-CF8 2GB
Apacer Technology 78.B1GS6.AUC0B 4GB
Apacer Technology 78.B1GS6.AUC0B 4GB
Memoria RAM
Samsung M378B5773DH0-CH9 2GB
Samsung M378B5773DH0-CH9 2GB
G Skill Intl F4-2666C15-8GVS 8GB
G Skill Intl F4-2666C15-8GVS 8GB
Memoria RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Smart Modular SMU4WEC8C1K0464FCG 8GB
Smart Modular SMU4WEC8C1K0464FCG 8GB
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G Skill Intl F2-8500CL5-2GBPI 2GB
G Skill Intl F2-8500CL5-2GBPI 2GB
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Memoria RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS16G4D240FSB.16FBR 16GB
Crucial Technology BLS16G4D240FSB.16FBR 16GB
Memoria RAM
Corsair CMY8GX3M2B2133C9 4GB
Corsair CMY8GX3M2B2133C9 4GB
Corsair CMZ8GX3M1A1600C9 8GB
Corsair CMZ8GX3M1A1600C9 8GB
Memoria RAM
A-DATA Technology DQVE1908 512MB
A-DATA Technology DQVE1908 512MB
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Corsair CM4X8GE3000C15K4 8GB
Memoria RAM
Samsung M393B1K70CH0-CH9 8GB
Samsung M393B1K70CH0-CH9 8GB
Hynix Semiconductor (Hyundai Electronics) HMA82GU6JJR8N-VK 16GB
Hynix Semiconductor (Hyundai Electronics) HMA82GU6JJR8N
Memoria RAM
G Skill Intl F3-10600CL9-2GBNT 2GB
G Skill Intl F3-10600CL9-2GBNT 2GB
Crucial Technology BLS8G4D240FSA.16FBD 8GB
Crucial Technology BLS8G4D240FSA.16FBD 8GB
Memoria RAM
AMD R5316G1609U2K 8GB
AMD R5316G1609U2K 8GB
Corsair CMK64GX4M4A2666C16 16GB
Corsair CMK64GX4M4A2666C16 16GB
Memoria RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
G Skill Intl F4-3400C16-16GVK 16GB
G Skill Intl F4-3400C16-16GVK 16GB
Memoria RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
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Memoria RAM
Kingston KVT8FP-HYC 4GB
Kingston KVT8FP-HYC 4GB
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G Skill Intl F4-3300C16-8GTZSW 8GB
Memoria RAM
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Samsung M393B2G70BH0-CK0 16GB
Kingston M378A1K43CB2-CRC 8GB
Kingston M378A1K43CB2-CRC 8GB
Memoria RAM