Samsung M378B5673EH1-CF8 2GB vs Kingston KHX3333C17D4/4GX 4GB

Punteggio complessivo

Samsung M378B5673EH1-CF8 2GB

Samsung M378B5673EH1-CF8 2GB

Punteggio complessivo

Kingston KHX3333C17D4/4GX 4GB

Kingston KHX3333C17D4/4GX 4GB

Differenze Specifiche tecniche Commenti

Differenze

Samsung M378B5673EH1-CF8 2GB

Motivi da considerare
Samsung M378B5673EH1-CF8 2GB

Velocità di lettura più elevata, GB/s

12.7 12

Valore medio nei test

Kingston KHX3333C17D4/4GX 4GB

Motivi da considerare
Kingston KHX3333C17D4/4GX 4GB

Velocità di scrittura più elevata, GB/s

9.9 7.5

Valore medio nei test
Larghezza di banda di memoria superiore, mbps

17000 8500

Intorno 2 larghezza di banda superiore

Specifiche tecniche

Elenco completo delle specifiche tecniche

Samsung M378B5673EH1-CF8 2GB

Kingston KHX3333C17D4/4GX 4GB

Caratteristiche principali

Tipo di memoria

DDR3 DDR4
Latenza in PassMark, ns

28 28
Velocità di lettura, GB/s

12.7 12.0
Velocità di scrittura, GB/s

7.5 9.9
Larghezza di banda della memoria, mbps

8500 17000

Other

Descrizione

PC3-8500, 1.5V, CAS Supported: 6 7 8 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
Temporizzazioni / Velocità di clock

7-7-7-20 / 1066 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Classifica PassMark (più sono, meglio è)

1988 2537

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

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Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

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