Samsung M378B5773CH0-CH9 2GB vs Nanya Technology M2F2G64CB88G7N-CG 2GB

Punteggio complessivo

Samsung M378B5773CH0-CH9 2GB

Samsung M378B5773CH0-CH9 2GB

Punteggio complessivo

Nanya Technology M2F2G64CB88G7N-CG 2GB

Nanya Technology M2F2G64CB88G7N-CG 2GB

Differenze Specifiche tecniche Commenti

Differenze

Samsung M378B5773CH0-CH9 2GB

Motivi da considerare
Samsung M378B5773CH0-CH9 2GB

Velocità di scrittura più elevata, GB/s

7.4 7.1

Valore medio nei test

Nanya Technology M2F2G64CB88G7N-CG 2GB

Motivi da considerare
Nanya Technology M2F2G64CB88G7N-CG 2GB

Al di sotto della latenza nei test PassMark, ns

27 39

Intorno -44% latenza inferiore
Velocità di lettura più elevata, GB/s

13.4 12.8

Valore medio nei test

Specifiche tecniche

Elenco completo delle specifiche tecniche

Samsung M378B5773CH0-CH9 2GB

Nanya Technology M2F2G64CB88G7N-CG 2GB

Caratteristiche principali

Tipo di memoria

DDR3 DDR3
Latenza in PassMark, ns

39 27
Velocità di lettura, GB/s

12.8 13.4
Velocità di scrittura, GB/s

7.4 7.1
Larghezza di banda della memoria, mbps

10600 10600

Other

Descrizione

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9
Temporizzazioni / Velocità di clock

7-7-7-20 / 1333 MHz 7-7-7-20 / 1333 MHz
Classifica PassMark (più sono, meglio è)

1770 1704

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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