Samsung M378B5773SB0-CK0 2GB vs Nanya Technology NT4GC64B8HG0NF-DI 4GB

Punteggio complessivo

Samsung M378B5773SB0-CK0 2GB

Samsung M378B5773SB0-CK0 2GB

Punteggio complessivo

Nanya Technology NT4GC64B8HG0NF-DI 4GB

Nanya Technology NT4GC64B8HG0NF-DI 4GB

Differenze Specifiche tecniche Commenti

Differenze

Samsung M378B5773SB0-CK0 2GB

Motivi da considerare
Samsung M378B5773SB0-CK0 2GB

Al di sotto della latenza nei test PassMark, ns

27 43

Intorno 37% latenza inferiore

Nanya Technology NT4GC64B8HG0NF-DI 4GB

Motivi da considerare
Nanya Technology NT4GC64B8HG0NF-DI 4GB

Velocità di lettura più elevata, GB/s

13.4 11

Valore medio nei test
Velocità di scrittura più elevata, GB/s

9.1 8.0

Valore medio nei test

Specifiche tecniche

Elenco completo delle specifiche tecniche

Samsung M378B5773SB0-CK0 2GB

Nanya Technology NT4GC64B8HG0NF-DI 4GB

Caratteristiche principali

Tipo di memoria

DDR3 DDR3
Latenza in PassMark, ns

27 43
Velocità di lettura, GB/s

11.0 13.4
Velocità di scrittura, GB/s

8.0 9.1
Larghezza di banda della memoria, mbps

12800 12800

Other

Descrizione

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11
Temporizzazioni / Velocità di clock

9-9-9-24 / 1600 MHz 9-9-9-24 / 1600 MHz
Classifica PassMark (più sono, meglio è)

1581 2204

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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RAM 2

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