Samsung M378B5773SB0-CK0 2GB vs Nanya Technology NT4GC64B8HG0NF-DI 4GB

总分

Samsung M378B5773SB0-CK0 2GB

Samsung M378B5773SB0-CK0 2GB

总分

Nanya Technology NT4GC64B8HG0NF-DI 4GB

Nanya Technology NT4GC64B8HG0NF-DI 4GB

差异规格评论

差异

Samsung M378B5773SB0-CK0 2GB

需要考虑的原因
Samsung M378B5773SB0-CK0 2GB

报告一个错误

低于PassMark测试中的延时，ns

27 43

左右 37% 更低的延时

Nanya Technology NT4GC64B8HG0NF-DI 4GB

需要考虑的原因
Nanya Technology NT4GC64B8HG0NF-DI 4GB

报告一个错误

更快的读取速度，GB/s

13.4 11

测试中的平均数值
更快的写入速度，GB/s

9.1 8.0

测试中的平均数值

规格

完整的技术规格清单

Samsung M378B5773SB0-CK0 2GB

Nanya Technology NT4GC64B8HG0NF-DI 4GB

主要特点

存储器类型

DDR3 DDR3
PassMark中的延时，ns

27 43
读取速度，GB/s

11.0 13.4
写入速度，GB/s

8.0 9.1
内存带宽，mbps

12800 12800

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11
时序/时钟速度

9-9-9-24 / 1600 MHz 9-9-9-24 / 1600 MHz
排名PassMark (越多越好)

1581 2204

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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