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SK Hynix HMT451S6AFR8A-PB 4GB
Nanya Technology NT4GC64B8HG0NF-DI 4GB

SK Hynix HMT451S6AFR8A-PB 4GB vs Nanya Technology NT4GC64B8HG0NF-DI 4GB

总分
star star star star star
SK Hynix HMT451S6AFR8A-PB 4GB

SK Hynix HMT451S6AFR8A-PB 4GB

总分
star star star star star
Nanya Technology NT4GC64B8HG0NF-DI 4GB

Nanya Technology NT4GC64B8HG0NF-DI 4GB

差异 规格 评论

差异

SK Hynix HMT451S6AFR8A-PB 4GB 需要考虑的原因
SK Hynix HMT451S6AFR8A-PB 4GB
报告一个错误
Nanya Technology NT4GC64B8HG0NF-DI 4GB 需要考虑的原因
Nanya Technology NT4GC64B8HG0NF-DI 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    43 left arrow 44
    左右 -2% 更低的延时
  • 更快的读取速度，GB/s
    13.4 left arrow 12.3
    测试中的平均数值
  • 更快的写入速度，GB/s
    9.1 left arrow 7.9
    测试中的平均数值

规格

完整的技术规格清单
SK Hynix HMT451S6AFR8A-PB 4GB
Nanya Technology NT4GC64B8HG0NF-DI 4GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR3
  • PassMark中的延时，ns
    44 left arrow 43
  • 读取速度，GB/s
    12.3 left arrow 13.4
  • 写入速度，GB/s
    7.9 left arrow 9.1
  • 内存带宽，mbps
    12800 left arrow 12800
Other
  • 描述
    PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 left arrow PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 9-9-9-24 / 1600 MHz
  • 排名PassMark (越多越好)
    2022 left arrow 2204

SK Hynix HMT451S6AFR8A-PB 4GB RAM的比较

SK Hynix HMT351S6CFR8C-PB 4GB
Samsung M471B5173DB0-YK0 4GB

Nanya Technology NT4GC64B8HG0NF-DI 4GB RAM的比较

Samsung M378B5773SB0-CK0 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

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SK Hynix HMT451S6AFR8A-PB 4GB
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