Samsung M393B1G70BH0-YK0 8GB vs Micron Technology 72ASS8G72LZ-2G3B2 64GB

Punteggio complessivo

Samsung M393B1G70BH0-YK0 8GB

Samsung M393B1G70BH0-YK0 8GB

Punteggio complessivo

Micron Technology 72ASS8G72LZ-2G3B2 64GB

Micron Technology 72ASS8G72LZ-2G3B2 64GB

Differenze Specifiche tecniche Commenti

Differenze

Samsung M393B1G70BH0-YK0 8GB

Motivi da considerare
Samsung M393B1G70BH0-YK0 8GB

Velocità di lettura più elevata, GB/s

10.2 9.3

Valore medio nei test
Velocità di scrittura più elevata, GB/s

8.1 6.6

Valore medio nei test

Micron Technology 72ASS8G72LZ-2G3B2 64GB

Motivi da considerare
Micron Technology 72ASS8G72LZ-2G3B2 64GB

Al di sotto della latenza nei test PassMark, ns

38 49

Intorno -29% latenza inferiore
Larghezza di banda di memoria superiore, mbps

19200 12800

Intorno 1.5 larghezza di banda superiore

Specifiche tecniche

Elenco completo delle specifiche tecniche

Samsung M393B1G70BH0-YK0 8GB

Micron Technology 72ASS8G72LZ-2G3B2 64GB

Caratteristiche principali

Tipo di memoria

DDR3 DDR4
Latenza in PassMark, ns

49 38
Velocità di lettura, GB/s

10.2 9.3
Velocità di scrittura, GB/s

8.1 6.6
Larghezza di banda della memoria, mbps

12800 19200

Other

Descrizione

PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
Temporizzazioni / Velocità di clock

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Classifica PassMark (più sono, meglio è)

2465 2107

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

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Absolute Latency

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RAM 2

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Frequency (Mhz) *

Absolute Latency

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