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Samsung M471B1G73BH0-CH9 8GB
Nanya Technology NT4GC64B8HB0NS-CG 4GB

Samsung M471B1G73BH0-CH9 8GB vs Nanya Technology NT4GC64B8HB0NS-CG 4GB

Punteggio complessivo
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Samsung M471B1G73BH0-CH9 8GB

Samsung M471B1G73BH0-CH9 8GB

Punteggio complessivo
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Nanya Technology NT4GC64B8HB0NS-CG 4GB

Nanya Technology NT4GC64B8HB0NS-CG 4GB

Differenze Specifiche tecniche Commenti

Differenze

Samsung M471B1G73BH0-CH9 8GB Motivi da considerare
Samsung M471B1G73BH0-CH9 8GB
Segnala un bug
  • Al di sotto della latenza nei test PassMark, ns
    29 left arrow 40
    Intorno 28% latenza inferiore
Nanya Technology NT4GC64B8HB0NS-CG 4GB Motivi da considerare
Nanya Technology NT4GC64B8HB0NS-CG 4GB
Segnala un bug
  • Velocità di lettura più elevata, GB/s
    11.7 left arrow 10.8
    Valore medio nei test
  • Velocità di scrittura più elevata, GB/s
    7.6 left arrow 6.5
    Valore medio nei test

Specifiche tecniche

Elenco completo delle specifiche tecniche
Samsung M471B1G73BH0-CH9 8GB
Nanya Technology NT4GC64B8HB0NS-CG 4GB
Caratteristiche principali
  • Tipo di memoria
    DDR3 left arrow DDR3
  • Latenza in PassMark, ns
    29 left arrow 40
  • Velocità di lettura, GB/s
    10.8 left arrow 11.7
  • Velocità di scrittura, GB/s
    6.5 left arrow 7.6
  • Larghezza di banda della memoria, mbps
    10600 left arrow 10600
Other
  • Descrizione
    PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 left arrow PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9
  • Temporizzazioni / Velocità di clock
    7-7-7-20 / 1333 MHz left arrow 7-7-7-20 / 1333 MHz
  • Classifica PassMark (più sono, meglio è)
    1953 left arrow 1893

Samsung M471B1G73BH0-CH9 8GB Confronto tra le RAM

Samsung M471B5273CH0-CH9 4GB
Corsair CM4X8GF2666C18S2 8GB

Nanya Technology NT4GC64B8HB0NS-CG 4GB Confronto tra le RAM

Nanya Technology NT4GC64B8HG0NS-CG 4GB
Elpida EBJ41UF8BCS0-DJ-F 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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