Samsung M471B5273DH0-CH9 4GB vs Kingston TSB16D3LS1KBG/4G 4GB

Punteggio complessivo

Samsung M471B5273DH0-CH9 4GB

Samsung M471B5273DH0-CH9 4GB

Punteggio complessivo

Kingston TSB16D3LS1KBG/4G 4GB

Kingston TSB16D3LS1KBG/4G 4GB

Differenze Specifiche tecniche Commenti

Differenze

Samsung M471B5273DH0-CH9 4GB

Motivi da considerare
Samsung M471B5273DH0-CH9 4GB

Velocità di scrittura più elevata, GB/s

5.9 5.5

Valore medio nei test

Kingston TSB16D3LS1KBG/4G 4GB

Motivi da considerare
Kingston TSB16D3LS1KBG/4G 4GB

Al di sotto della latenza nei test PassMark, ns

40 47

Intorno -18% latenza inferiore
Velocità di lettura più elevata, GB/s

9.7 9.3

Valore medio nei test
Larghezza di banda di memoria superiore, mbps

12800 10600

Intorno 1.21 larghezza di banda superiore

Specifiche tecniche

Elenco completo delle specifiche tecniche

Samsung M471B5273DH0-CH9 4GB

Kingston TSB16D3LS1KBG/4G 4GB

Caratteristiche principali

Tipo di memoria

DDR3 DDR3
Latenza in PassMark, ns

47 40
Velocità di lettura, GB/s

9.3 9.7
Velocità di scrittura, GB/s

5.9 5.5
Larghezza di banda della memoria, mbps

10600 12800

Other

Descrizione

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11
Temporizzazioni / Velocità di clock

7-7-7-20 / 1333 MHz 9-9-9-24 / 1600 MHz
Classifica PassMark (più sono, meglio è)

1413 1416

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

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