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Samsung M471B5273DH0-CH9 4GB
Kingston TSB16D3LS1KBG/4G 4GB

Samsung M471B5273DH0-CH9 4GB vs Kingston TSB16D3LS1KBG/4G 4GB

总分
star star star star star
Samsung M471B5273DH0-CH9 4GB

Samsung M471B5273DH0-CH9 4GB

总分
star star star star star
Kingston TSB16D3LS1KBG/4G 4GB

Kingston TSB16D3LS1KBG/4G 4GB

差异 规格 评论

差异

Samsung M471B5273DH0-CH9 4GB 需要考虑的原因
Samsung M471B5273DH0-CH9 4GB
报告一个错误
  • 更快的写入速度，GB/s
    5.9 left arrow 5.5
    测试中的平均数值
Kingston TSB16D3LS1KBG/4G 4GB 需要考虑的原因
Kingston TSB16D3LS1KBG/4G 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    40 left arrow 47
    左右 -18% 更低的延时
  • 更快的读取速度，GB/s
    9.7 left arrow 9.3
    测试中的平均数值
  • 更高的内存带宽，mbps
    12800 left arrow 10600
    左右 1.21 更高的带宽

规格

完整的技术规格清单
Samsung M471B5273DH0-CH9 4GB
Kingston TSB16D3LS1KBG/4G 4GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR3
  • PassMark中的延时，ns
    47 left arrow 40
  • 读取速度，GB/s
    9.3 left arrow 9.7
  • 写入速度，GB/s
    5.9 left arrow 5.5
  • 内存带宽，mbps
    10600 left arrow 12800
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 left arrow PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 9-9-9-24 / 1600 MHz
  • 排名PassMark (越多越好)
    1413 left arrow 1416

Samsung M471B5273DH0-CH9 4GB RAM的比较

Crucial Technology CT16G4SFRA32A.M16FRS 16GB

Kingston TSB16D3LS1KBG/4G 4GB RAM的比较

Kingston 99U5469-035.A00LF 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

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内存RAM
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Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
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内存RAM