Samsung M471B5773DH0-CH9 2GB vs AMD R334G1339U2S 4GB

Punteggio complessivo

Samsung M471B5773DH0-CH9 2GB

Samsung M471B5773DH0-CH9 2GB

Punteggio complessivo

AMD R334G1339U2S 4GB

AMD R334G1339U2S 4GB

Differenze Specifiche tecniche Commenti

Differenze

Samsung M471B5773DH0-CH9 2GB

Motivi da considerare
Samsung M471B5773DH0-CH9 2GB

Velocità di lettura più elevata, GB/s

11 9

Valore medio nei test
Velocità di scrittura più elevata, GB/s

7.2 4.8

Valore medio nei test

AMD R334G1339U2S 4GB

Motivi da considerare
AMD R334G1339U2S 4GB

Al di sotto della latenza nei test PassMark, ns

29 43

Intorno -48% latenza inferiore

Specifiche tecniche

Elenco completo delle specifiche tecniche

Samsung M471B5773DH0-CH9 2GB

AMD R334G1339U2S 4GB

Caratteristiche principali

Tipo di memoria

DDR3 DDR3
Latenza in PassMark, ns

43 29
Velocità di lettura, GB/s

11.0 9.0
Velocità di scrittura, GB/s

7.2 4.8
Larghezza di banda della memoria, mbps

10600 10600

Other

Descrizione

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 PC3-10600, 1.5V, CAS Supported: 6 7 8 9
Temporizzazioni / Velocità di clock

7-7-7-20 / 1333 MHz 7-7-7-20 / 1333 MHz
Classifica PassMark (più sono, meglio è)

1393 1726

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

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Ultimi confronti

Samsung M471B5773DH0-CH9 2GB

Samsung M471B5773DH0-CH9 2GB

AMD R334G1339U2S 4GB

AMD R334G1339U2S 4GB

AMD AE34G1601U1 4GB

AMD AE34G1601U1 4GB

Kingston 9905598-019.A00G 16GB

Kingston 9905598-019.A00G 16GB

PNY Electronics PNY 2GB

PNY Electronics PNY 2GB

Corsair CM4X4GF2666Z16K4 4GB

Corsair CM4X4GF2666Z16K4 4GB

TwinMOS 8DPT5MK8-TATP 2GB

TwinMOS 8DPT5MK8-TATP 2GB

Kingston KF2666C13D4/8GX 8GB

Kingston KF2666C13D4/8GX 8GB

AMD R5S38G1601U2S 8GB

AMD R5S38G1601U2S 8GB

G Skill Intl F4-3600C18-8GTZR 8GB

G Skill Intl F4-3600C18-8GTZR 8GB

Kingston 99U5474-028.A00LF 4GB

Kingston 99U5474-028.A00LF 4GB

Micron Technology 18ASF2G72PDZ-2G6H1R 16GB

Micron Technology 18ASF2G72PDZ-2G6H1R 16GB

Samsung M471B5173DB0-YK0 4GB

Samsung M471B5173DB0-YK0 4GB

Gold Key Technology Co Ltd NMUD416E82-4600C 16GB

Gold Key Technology Co Ltd NMUD416E82-4600C 16GB

Samsung M3 78T2953EZ3-CF7 1GB

Samsung M3 78T2953EZ3-CF7 1GB

Ramaxel Technology RMUA5110MD78HAF-2666 8GB

Ramaxel Technology RMUA5110MD78HAF-2666 8GB

Nanya Technology M2N1G64TUH8D5F-AC 1GB

Nanya Technology M2N1G64TUH8D5F-AC 1GB

Crucial Technology BL8G32C16U4WL.M8FE1 8GB

Crucial Technology BL8G32C16U4WL.M8FE1 8GB

SK Hynix HYMP31GF72CMP4D5Y5 8GB

SK Hynix HYMP31GF72CMP4D5Y5 8GB

Wilk Elektronik S.A. GX2426D464S/8GSBS2 8GB

Wilk Elektronik S.A. GX2426D464S/8GSBS2 8GB

Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB

Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8

InnoDisk Corporation M4S0-8GSSOCRG 8GB

InnoDisk Corporation M4S0-8GSSOCRG 8GB

Nanya Technology M2F4GH64CB8HB6N-CG 4GB

Nanya Technology M2F4GH64CB8HB6N-CG 4GB

Crucial Technology CT16G4DFD824A.C16FHD 16GB

Crucial Technology CT16G4DFD824A.C16FHD 16GB

A-DATA Technology ADOVE1A0834E 1GB

A-DATA Technology ADOVE1A0834E 1GB

I’M Intelligent Memory Ltd. PF4OUN-2400CH0-08G-A 8GB

I’M Intelligent Memory Ltd. PF4OUN-2400CH0-08G-A 8GB

G Skill Intl F4-4000C14-16GTZR 16GB

G Skill Intl F4-4000C14-16GTZR 16GB

Micron Technology 18ASF1G72PDZ-2G1B1 8GB

Micron Technology 18ASF1G72PDZ-2G1B1 8GB