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Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB
Thermaltake Technology Co Ltd CL-W262-CA00SW-A 8GB
Confronto
Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB vs Thermaltake Technology Co Ltd CL-W262-CA00SW-A 8GB
Punteggio complessivo
Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB
Punteggio complessivo
Thermaltake Technology Co Ltd CL-W262-CA00SW-A 8GB
Differenze
Specifiche tecniche
Commenti
Differenze
Motivi da considerare
Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB
Segnala un bug
Motivi da considerare
Thermaltake Technology Co Ltd CL-W262-CA00SW-A 8GB
Segnala un bug
Velocità di lettura più elevata, GB/s
21
17.7
Valore medio nei test
Velocità di scrittura più elevata, GB/s
19.6
12.7
Valore medio nei test
Specifiche tecniche
Elenco completo delle specifiche tecniche
Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB
Thermaltake Technology Co Ltd CL-W262-CA00SW-A 8GB
Caratteristiche principali
Tipo di memoria
DDR4
DDR4
Latenza in PassMark, ns
22
22
Velocità di lettura, GB/s
17.7
21.0
Velocità di scrittura, GB/s
12.7
19.6
Larghezza di banda della memoria, mbps
21300
21300
Other
Descrizione
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
Temporizzazioni / Velocità di clock
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Classifica PassMark (più sono, meglio è)
3075
4240
Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB Confronto tra le RAM
Thermaltake Technology Co Ltd R019D408GX2-3200C16A 8GB
Micron Technology 18ASF2G72AZ-2G1A1 16GB
Thermaltake Technology Co Ltd CL-W262-CA00SW-A 8GB Confronto tra le RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston 9965525-155.A00LF 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Ultimi confronti
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