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SK Hynix HMA41GR7AFR4N-TF 8GB
Samsung M471A1A43DB0-CPB 8GB

SK Hynix HMA41GR7AFR4N-TF 8GB vs Samsung M471A1A43DB0-CPB 8GB

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SK Hynix HMA41GR7AFR4N-TF 8GB

SK Hynix HMA41GR7AFR4N-TF 8GB

Punteggio complessivo
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Samsung M471A1A43DB0-CPB 8GB

Samsung M471A1A43DB0-CPB 8GB

Differenze Specifiche tecniche Commenti

Differenze

SK Hynix HMA41GR7AFR4N-TF 8GB Motivi da considerare
SK Hynix HMA41GR7AFR4N-TF 8GB
Segnala un bug
  • Velocità di scrittura più elevata, GB/s
    8.5 left arrow 6.4
    Valore medio nei test
Samsung M471A1A43DB0-CPB 8GB Motivi da considerare
Samsung M471A1A43DB0-CPB 8GB
Segnala un bug
  • Al di sotto della latenza nei test PassMark, ns
    27 left arrow 52
    Intorno -93% latenza inferiore
  • Velocità di lettura più elevata, GB/s
    12.3 left arrow 10.3
    Valore medio nei test

Specifiche tecniche

Elenco completo delle specifiche tecniche
SK Hynix HMA41GR7AFR4N-TF 8GB
Samsung M471A1A43DB0-CPB 8GB
Caratteristiche principali
  • Tipo di memoria
    DDR4 left arrow DDR4
  • Latenza in PassMark, ns
    52 left arrow 27
  • Velocità di lettura, GB/s
    10.3 left arrow 12.3
  • Velocità di scrittura, GB/s
    8.5 left arrow 6.4
  • Larghezza di banda della memoria, mbps
    17000 left arrow 17000
Other
  • Descrizione
    PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • Temporizzazioni / Velocità di clock
    14-14-14, 15-15-15, 16-16-16 / 2133 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • Classifica PassMark (più sono, meglio è)
    2390 left arrow 1732

SK Hynix HMA41GR7AFR4N-TF 8GB Confronto tra le RAM

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Samsung M471A1A43DB0-CPB 8GB Confronto tra le RAM

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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